Infineon Technologies has released the BGSX24M2U16, a DP4T antenna cross switch designed for LTE and 5G mobile devices. This RF CMOS-based switch features high linearity up to 39 dBm input power, fast switching times, and low insertion loss with high port-to-port isolation across frequencies up to 7.125 GHz.
The switch supports the MIPI RFFE 2.1 standard with four USIDs, offering both software and hardware-programmable USID options. It operates on 1.2 V or 1.8 V VIO, with low current consumption and compatibility with industrial qualification standards under JEDEC47/20/22.
Infineon notes that the BGSX24M2U16 provides reliable DP4T antenna routing and swapping for cellular devices, supporting LTE and 5G applications in compact form factors. Its 2.0 mm × 2.0 mm ultra-low-profile package requires external DC blocking capacitors only if external DC voltage is applied at the RF ports.
The antenna cross switch delivers low harmonic generation and integrates an on-chip controller for simplified MIPI interface communication. RF performance includes insertion loss as low as 0.43 dB at sub-1 GHz bands, isolation up to 47 dB, and switching times as fast as 2 µs for 5G SRS applications.
This BGSX24M2U16 switch is qualified for industrial applications and is available in the PG-ULGA-16-6 package. Infineon provides detailed application diagrams, truth tables, package drawings, and recommended footprints within the product documentation.
Click here to view the BGSX24M2U16 Antenna Cross Switch.
