AMCAD has developed a new technological approach to address one of the most persistent challenges in high-power transistor testing - achieving accurate, repeatable measurements without compromising device safety or engineering flexibility. As the demand for electric mobility accelerates, GaN power transistor technologies continue to evolve at a rapid pace. Yet, these advanced devices still face performance-limiting issues such as trapping effects, where electrons become locked within the material structure. Understanding and mitigating these behaviors requires high-power, short-pulse IV measurement capabilities - an area where many engineers are forced to make trade-offs between precision, operational flexibility, and equipment safety.
AMCAD’s upcoming solution seeks to reverse this paradigm. Instead of requiring engineers to adapt their workflows to the limitations of existing instruments, the new system is designed to meet the needs of modern power-device research and development.
The next-generation pulsed IV platform will offer:
- Reliable, accurate, and repeatable measurement performance
- An expanded operating range up to ±150 A and 1500 V, with pulse widths reaching into the nanosecond domain
- Advanced threshold-management features to safeguard both components and test benches
- Seamless integration into existing laboratory environments
With this announcement, AMCAD signals a significant step forward in high-power transistor testing technology. More details on the new pulsed IV system will be released soon.
Click here to learn more about AMCAD.
