Northrop Grumman Develops W-Band RF GaN Chip for Department of War Delivers in Record Time

Northrop Grumman Develops W-Band RF GaN Chip for Department of War Delivers in Record Time

Northrop Grumman has developed a W-Band Gallium Nitride (GaN) chip for ultra-fast, secure wireless links for military radars and next-gen 5G/6G connectivity. The chip acts like a tiny, superefficient “brain” that strengthens wireless signals - making them clearer and faster - providing the military with secure communications and letting everyday devices enjoy quicker, more reliable connections. Its compact and low-cost design replaces bulky, power-hungry gear and helps keep the country ahead in next-generation wireless technology.

Manufactured at Northrop Grumman’s semiconductor facility in Redondo Beach, California, this chip was developed in less than 6 months through a project with the Microelectronics Commons California DREAMS hub, where Northrop Grumman is a leading partner. This program is funded by the Office of the Under Secretary of War for Research and Engineering (OUSW(R&E)) as part of a unique industry-government-academia partnership designed to keep the nation at the forefront of microchip innovation and deliver breakthrough technology to the field faster. 

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Publisher: everything RF
Tags:-   GaNMilitarySemiconductors