At IMS 2026, everything RF visited the WAVEPIA booth, where they showcased their latest RF and microwave technologies, including a new beamformer IC portfolio, high-power GaN MMIC amplifiers, SATCOM components, and integrated RF front-end modules for applications across radar, satellite communications, drones, and space systems.
Beamformer IC Launch
At booth #24027, John Mastela, President of the International Microwave Power Institute (IMPI), introduced Wavepia's new beamformer IC family. These devices are based on CMOS and GaAs technologies and support both true time delay (TTD) and phase-shifter architectures. They are available in single-channel and four-channel configurations and are designed for phased-array and beam-steering applications, enabling flexible control of signal direction in radar, SATCOM, and wireless systems. These ICs form part of a broader RF and mixed-signal design capability, complementing the company’s GaN and MMIC portfolio. The beamformer ICs were one of the key new product introductions at IMS 2026, reflecting WAVEPIA’s expansion into integrated beamforming solutions.
Wavepia GaN MMIC's and Power Amplifiers
The demonstration then moved through WAVEPIA’s amplifier portfolio, starting with broadband GaN MMIC power amplifiers covering ranges such as 2–9 GHz, 6–12 GHz, and 6–18 GHz, designed with 50-ohm input and output interfaces for ease of integration.
The company also presented its high-power GaN MMIC portfolio across multiple frequency bands. In the S-band (2–4 GHz), devices delivering up to 250 W output power were shown. In the C-band (5–7 GHz and 7–9 GHz), amplifiers with output power up to 240 W were demonstrated. Moving to X-band (8–11 GHz), new devices provided power levels up to 200 W.
For higher-frequency applications, WAVEPIA showcased Ku-band and Ka-band SATCOM solutions, including power amplifiers such as 15–18 GHz units with 50 W and 100 W output, and Ka-band amplifiers operating from 32–37 GHz with output power in the 10 W to 30 W range. Additional examples included 12.75–14.5 GHz amplifiers delivering up to 100 W and 27–32 GHz devices in the 10 W to 30 W class, supporting both uplink and downlink applications.
LNA's and RF Front-end Modules
The demonstration also included SATCOM low-noise amplifiers operating across multiple frequency ranges, including 10–15 GHz, 13–15 GHz, 14–17 GHz, and 27–32 GHz, with gain levels around 20 dB for low-noise signal reception.
WAVEPIA further demonstrated customizable RF front-end modules, integrating components such as switches, power amplifiers, and LNAs within a single unit. These modules can be configured based on customer requirements, including options to integrate additional functions such as phase shifters or circulators, enabling flexible subsystem design. They also showcased small pallet amplifiers and waveguide-based amplifier assemblies, where RF modules are integrated into compact or waveguide structures for higher-frequency and higher-power operation.
The demonstration also highlighted WAVEPIA’s manufacturing approach. The company performs assembly and packaging in-house while sourcing wafers from external foundries, enabling flexible design and customization. Its automated production lines support high-volume manufacturing with minimal manual intervention, improving consistency and reliability. The company also uses a void-free die-attach process with more than 99.8% bonding quality, supporting improved thermal performance in high-power devices.
Click here to learn more about Wavepia and its product catalog.
