United Monolithic Semiconductors has introduced the CHA8265-98F, a three-stage high-power amplifier (HPA) designed to operate across the 27.5 GHz to 31 GHz frequency range. The new device is intended for Ka-band satellite communications (SatCom), 5G infrastructure, and other microwave systems that require high output power and efficiency.
The amplifier delivers a typical 25 W saturated output power with approximately 30% power-added efficiency (PAE) when operating at a 25 V drain voltage. Under linear operating conditions, it provides 10 W of output power with -25 dBc third-order intermodulation distortion (IMD3) while maintaining a PAE of more than 25%. According to UMS, the device supports a drain bias range of 18 V to 25 V, enabling saturated output power between 15 W and 25 W depending on the operating voltage.
The CHA8265-98F is manufactured using GaN-on-SiC HEMT technology, a semiconductor process commonly used for high-frequency and high-power RF applications. It is supplied as a bare die, with both the input and output matched to 50 Ω, allowing integration into a range of microwave system designs.
According to the company, the amplifier is designed for applications including satellite communication terminals, 5G radio equipment, and other microwave platforms requiring high output power across the Ka-band frequency spectrum. The combination of output power, efficiency, and operating bandwidth is intended to support system designers developing next-generation wireless and satellite communication equipment.
