FGN1902

RF Amplifier by Falcomm

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FGN1902 Image

The FGN1902 from Falcomm is a Dual-stage GaN Power Amplifier from 17 to 22 GHz. It is based on Falcomm’s proprietary technology, which reduces thermal management requirements and can be combined with other efficiency-enhancing techniques, making it suitable for K-band applications such as satellite communications. This dual-stage power amplifier delivers a saturated output power of 35.2 dBm (~3.3 W), with a gain of 19.1 dB and a PAE of 43.1%. It requires a DC supply of 15 to 24 V and consumes less than 11 W of power. This amplifier is available in a QFN package and is ideal for SATCOM, point-to-point wireless backhaul, defense and research & development applications.

Product Specifications

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Product Details

  • Part Number
    FGN1902
  • Manufacturer
    Falcomm
  • Description
    4 W Dual-Stage GaN Power Amplifier from 17 to 22 GHz

General Parameters

  • Type
    Power Amplifier View all
  • Configuration
    IC/MMIC/SMT View all
  • Application
    Backhaul, Point-to-Point
  • Industry Application
    SATCOM, Aerospace & Defense, Test & Measurement, Wireless Infrastructure
  • Frequency
    17 to 22 GHz
  • Gain
    19.1 dB
  • PAE
    29.6 to 43.1 %
  • Input Return Loss
    10.8 dB
  • Output Return Loss
    19.5 dB
  • Supply Voltage
    15 to 24 V
  • Technology
    GaN
  • Package Type
    Surface Mount View all
  • Package
    QFN
  • Operating Temperature
    -40 to 85 Degree C

Technical Documents