NPA2040-SM

RF Amplifier by Nxbeam Inc

Note : Your request will be directed to Nxbeam Inc.

NPA2040-SM Image

The NPA2040-SM from Nxbeam is a GaN-on-SiC Power Amplifier (PA) that operates from 27.5 to 31 GHz (Ka-Band). It delivers a saturated output power of +39.6 dBm (~9 W) with a small signal gain of 22.5 dB and a power-added efficiency (PAE) of 25%. This PA is fabricated on 0.2 µm GaN HEMT-on-SiC technology and has RF input and output ports matched to 50 Ohms. It requires a DC supply of 28 V and consumes less than 550 mA of current. This power amplifier is available in a QFN package that measures 9.30 x 9.30 x 2.00 mm, enabling ease of integration. It is ideal for Ka-band satellite communication, 5G infrastructure, and point-to-point/point-to-multipoint digital radios.

Product Specifications

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Product Details

  • Part Number
    NPA2040-SM
  • Manufacturer
    Nxbeam Inc
  • Description
    9 W GaN-on-SiC Power Amplifier from 27.5 to 31 GHz

General Parameters

  • Type
    Power Amplifier View all
  • Configuration
    IC/MMIC/SMT View all
  • Application
    5G, Point-to-Multipoint, Point-to-Point
  • Industry Application
    SATCOM, Wireless Infrastructure
  • Frequency
    27.5 to 31 GHz
  • Power Gain
    15.2 to 16.8 dB
  • Small Signal Gain
    20.8 to 23 dB
  • Saturated Power
    38.2 to 39.6 W
  • Saturated Power
    6.6 to 9.12 W
  • PAE
    22 to 27 %
  • Impedance
    50 Ohms View all
  • Pulsed/CW
  • Sub-Category
    GaN Amplifier View all
  • Input Return Loss
    6 to 25 dB
  • Output Return Loss
    8 to 14 dB
  • Supply Voltage
    28 V
  • Current Consumption
    350 to 1400 mA
  • Transistor Technology
    GaN HEMT on SiC
  • Package Type
    Surface Mount View all
  • Package
    QFN
  • Dimensions
    15.10 x 9.9 x 3.25 mm

Technical Documents