NPQ2103-SM

RF Amplifier by Nxbeam Inc

Note : Your request will be directed to Nxbeam Inc.

NPQ2103-SM Image

The NPQ2103-SM from Nxbeam is a GaN-on-SiC Power Amplifier (PA) that operates from 27.5 to 31 GHz (Ka-Band). It delivers a saturated output power of 39 dBm (~8 W) with a small signal gain of 22.5 dB and a power-added efficiency (PAE) of 25%. This PA is fabricated using a 0.2 µm GaN HEMT-on-SiC process and has RF input and output ports matched to 50 Ohms. It requires a DC supply of 24 V and consumes less than 550 mA of current. This power amplifier is available in a QFN package that measures 9.30 x 9.30 x 2.00 mm, enabling ease of integration. It is ideal for Ka-band satellite communication, 5G infrastructure, and point-to-point/point-to-multipoint digital radios.

Product Specifications

View similar products

Product Details

  • Part Number
    NPQ2103-SM
  • Manufacturer
    Nxbeam Inc
  • Description
    8 W GaN-on-SiC Power Amplifier from 27.5 to 31 GHz

General Parameters

  • Type
    Power Amplifier View all
  • Configuration
    IC/MMIC/SMT View all
  • Application
    Point-to-Multipoint, Point-to-Point
  • Standards Supported
  • Industry Application
    SATCOM, Wireless Infrastructure
  • Frequency
    27.5 to 31 GHz
  • Power Gain
    15.2 to 16.8 dB
  • Saturated Power
    38.2 to 39.6 dBm
  • Saturated Power
    6.6 to 9.12 W
  • PAE
    22 to 28 %
  • Impedance
    50 Ohms View all
  • Pulsed/CW
  • Sub-Category
    GaN Amplifier View all
  • Input Return Loss
    6 to 25 dB
  • Output Return Loss
    8 to 14 dB
  • Supply Voltage
    20 to 27 V
  • Current Consumption
    350 to 1400 mA
  • Transistor Technology
    0.2um GaN HEMT on SiC
  • Technology
    GaN
  • Package Type
    Surface Mount View all
  • Package
    QFN
  • Dimensions
    9.3 x 9.3 x 2 mm

Technical Documents