RF Transistor by Qorvo (103 more products)

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QPD1425L Image

The QPD1425L from Qorvo is a High-Electron-Mobility Transistor (HEMT) that operates from 1.2 to 1.4 GHz. It delivers a saturated output power of 316 W (~55 dBm) with a large signal gain of 17 dB and a drain efficiency of 70%. This transistor is manufactured using a gallium-nitride (GaN) on silicon carbide (SiC) process and supports both CW and pulsed operations. It requires a DC supply of 65 V and consumes less than 430 mA of current. The HEMT is housed in an air cavity surface-mount package that measures 10.16 x 10.16 x 4.06 mm and is ideal for Radar applications.

Product Specifications

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Product Details

  • Part Number
  • Manufacturer
  • Description
    300 W CW/Pulsed GaN HEMT from 1.2 to 1.4 GHz for Radar Applications

General Parameters

  • Transistor Type
  • Technology
    GaN on SiC
  • Application Industry
    Radar, Military, Broadcast, Communication, Test & Measurement, GNSS, Avionics, Avionics, Wireless Infrastructure
  • Application Type
    L Band, Radar, Military, Radio Communications, Test Instrumentation GPS Communications, Avionics
  • Application
    Radar, Military, Radio, Test & Instrumentation, GPS, Communication System
  • CW/Pulse
    CW, Pulse
  • Frequency
    1200 to 1400 MHz
  • Power
    55 dBm (Psat)
  • Power(W)
    300 W (Psat)
  • Power Gain (Gp)
    17 dB
  • Supply Voltage
    65 V
  • Current
    430 mA
  • Drain Efficiency
  • Package Type
    2-Hole Flanged
  • Dimension
    10.16 x 10.16 x 4.06 mm
  • RoHS
  • Grade