QPD1425L

The QPD1425L from Qorvo is a High-Electron-Mobility Transistor (HEMT) that operates from 1.2 to 1.4 GHz. It delivers a saturated output power of 316 W (~55 dBm) with a large signal gain of 17 dB and a drain efficiency of 70%. This transistor is manufactured using a gallium-nitride (GaN) on silicon carbide (SiC) process and supports both CW and pulsed operations. It requires a DC supply of 65 V and consumes less than 430 mA of current. The HEMT is housed in an air cavity surface-mount package that measures 10.16 x 10.16 x 4.06 mm and is ideal for Radar applications.