RF Transistors - Wolfspeed

132 RF Transistors from Wolfspeed meet your specification.

RF Transistors from Wolfspeed are listed on everything RF. We have compiled a list of RF Transistors from the Wolfspeed website/catalog and made their products searchable by specification. Use the filters to narrow down on products based on your requirements. Download datasheets and request quotes for products that you find interesting. Your inquiry will be directed to Wolfspeed and their distributors in your region.

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  • Manufacturers: Wolfspeed
Description:450 W LDMOS FET from 960 to 1215 MHz
Application Industry:
Radar
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse
Frequency:
960 to 1215 MHz
Power:
56.53 dBm
Power(W):
450 W (Peak)
Gain:
16.5 to 18 dB
Supply Voltage:
50 V
more info
Description:180 W GaN on SiC HEMT from 2700 to 3100 MHz
Application Industry:
Radar
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW, Pulse
Frequency:
2700 to 3100 MHz
Power:
52.55 dBm
Package Type:
Earless Flanged
Power(W):
180 W
Gain:
15 dB
Supply Voltage:
50 V
more info
Description:400 W, 3600 to 3800 MHz GaN MMIC HEMT for Cellular Power Amplifier Applications
Application Industry:
Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW, Pulse
Frequency:
3.6 to 3.8 GHz
Power:
56.02 dBm
Package Type:
Flanged
Power(W):
400 W
Supply Voltage:
48 V
more info
GTRA412852FC Image
Description:GaN-on-SiC HEMT from 3.4 to 4.1 GHz
Application Industry:
Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse, CW
Frequency:
3.4 to 4.1 GHz
Power:
53.71 dBm
Package Type:
Flanged
Power(W):
235 W (P3dB)
Gain:
10 to 11.5 dB
Supply Voltage:
48 V
more info
GTRB097152FC-V1 Image
Description:450 W GaN-on-SiC HEMT from 758 to 960 MHz
Application Industry:
Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
Pulse
Frequency:
758 to 960 MHz
Power:
59.54 dBm
Package Type:
Earless Flanged
Power(W):
900 W (P4)
Gain:
18 dB
Supply Voltage:
48 V
more info
GTRB264318FC-V1 Image
Description:400 W GaN on SiC HEMT from 2500 to 2700 MHz
Application Industry:
Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW, Pulse
Frequency:
2.5 to 2.7 GHz
Power:
56.02 dBm (P3dB)
Package Type:
Flanged
Power(W):
400 W (P3dB)
Gain:
15 dB
Supply Voltage:
48 V
more info
GTRB266908FC-V1 Image
Description:500 W GaN-on-SiC HEMT from 2515 to 2675 MHz
Application Industry:
Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
Pulse
Frequency:
2.515 to 2.675 GHz
Power:
57 dBm (P3)
Package Type:
Earless Flanged
Power(W):
501.19 W
Gain:
15 dB
Supply Voltage:
48 V
more info
Description:1400 W GaN on Sic HEMT from 960 to 1215 MHz
Application Industry:
Aerospace & Defence, Radar
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW, Pulse
Frequency:
960 to 1215 MHz
Power:
61.46 dBm
Package Type:
Flanged
Power(W):
1400 W
Gain:
17 dB
Supply Voltage:
50 V
more info
Description:890 W GaN on SiC HEMT from 960 to 1215 MHz
Application Industry:
Aerospace & Defence, Avionics
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW, Pulse
Frequency:
960 to 1215 MHz
Power:
58.45 dBm
Package Type:
Flanged
Power(W):
700 W
Gain:
20 dB
Supply Voltage:
50 V
more info
Description:300 W, GaN on SiC HEMT from 2110 to 2200 MHz
Application Industry:
Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse, CW
Frequency:
2.11 to 2.2 GHz
Power:
47.5 dBm (Avg), 54.77 dBm (P3dB)
Package Type:
Earless Flanged
Power(W):
56.2 W (Avg), 300 W (P3dB)
Gain:
17.5 to 19 dB
Supply Voltage:
0 to 50 V
Package:
H-87265J-2
more info

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