RF Transistors - Wolfspeed

123 RF Transistors from Wolfspeed meet your specification.
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  • Manufacturers : Wolfspeed
Description:240 W LDMOS Transistor from 2515 to 2675 MHz
Application Industry:
Cellular
Transistor Type:
FET, LDMOS
CW/Pulse:
CW, Pulse
Frequency:
2515 to 2675 MHz
Power:
49.54 to 53.8 dBm (P3dB)
Power(W):
90 to 240 W (P3dB)
Gain:
12.8 to 13.5 dB
Supply Voltage:
28 V
more info
Description:500 W GaN HEMT from 2.7 to 3.1 GHz for S-Band Radar Applications
Application Industry:
Military, Radar
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
Pulse
Frequency:
2.7 to 3.1 GHz
Power:
57 to 57.9 dBm
Power(W):
500 to 616 W
Supply Voltage:
50 V
more info
Description:500 W GaN HEMT from 2.9 to 3.5 GHz for S-Band Radar Systems
Application Industry:
Radar
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
2.9 to 3.5 GHz
Power:
57.1 dBm
Power(W):
512.86 W
Supply Voltage:
50 V
more info
Description:400 W Thermally-Enhanced LDMOS Transistor from 859 to 960 MHz
Application Industry:
Cellular
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW, Pulse
Frequency:
859 to 960 MHz
Power:
49.4 dBm
Power(W):
87 W
Gain:
16.8 to 18.5 dB
Supply Voltage:
55 V
more info
Description:400 W CW/Pulsed GaN Amplifier from 2.75 to 3.75 GHz
Application Industry:
Radar
Technology:
GaN on SiC, GaN
CW/Pulse:
CW, Pulse
Frequency:
2.75 to 3.75 GHz
Power:
57.7 dBm
Power(W):
588.84 W
Supply Voltage:
50 V
more info
Description:520 W Thermally-Enhanced LDMOS Transistor from 925 to 960 MHz
Application Industry:
Cellular
Transistor Type:
LDMOS, FET
Technology:
Si
CW/Pulse:
CW, Pulse
Frequency:
925 to 960 MHz
Power:
57.16 dBm (P3dB)
Power(W):
520 W (P3dB)
Supply Voltage:
48 V
Package:
PG-HB2SOF-6-1
more info
Description:490 W GaN HEMT Transistor from 2.11 to 2.17 GHz
Application Industry:
Cellular
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW, Pulse
Frequency:
2.11 to 2.17 GHz
Power:
56.9 dBm
Power(W):
490 W
Gain:
13 to 14.4 dB
Supply Voltage:
48 V
more info
Description:6 W RF Power GaN HEMT in a Plastic Package
Application Industry:
Cellular
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
Frequency:
DC to 6 GHz
Power:
38.39 dBm
Power(W):
6.9 W
Supply Voltage:
28 V
more info
Description:800 W RF LDMOS Transistor from 730 to 960 MHz
Application Industry:
Cellular
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW
Frequency:
730 to 960 MHz
Power:
59.03 dBm (P3dB)
Power(W):
800 W (P3dB)
Gain:
17.3 to 19 dB
Supply Voltage:
48 V
more info
Description:460 W GaN Power Amplifier from 1805 to 1880 MHz
Application Industry:
Cellular
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW, Pulse
Frequency:
1805 to 1880 MHz
Power:
52.04 to 56.63 dBm (P3dB)
Power(W):
160 to 460 W (P3dB)
Gain:
14 to 15.5 dB
Supply Voltage:
48 V
Package:
H-37248C-4
more info

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