RF Transistors - Wolfspeed, A Cree Company

103 RF Transistors from Wolfspeed, A Cree Company meet your specification.
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  • Manufacturers : Wolfspeed, A Cree Company  
Description: 180 W GaN on SiC HEMT from 2700 to 3100 MHz
Application Industry:
Radar
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
CW, Pulse
Frequency:
2700 to 3100 MHz
Power:
52.55 dBm
Power(W):
180 W
Gain:
15 dB
Supply Voltage:
50 V
more info
Description: Thermally-Enhanced High Power RF GaN on SiC HEMT 170 W, 48 V, 2620 – 2690 MHz
Application Industry:
Cellular
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
Pulse, CW
Frequency:
2.62 to 2.69 GHz
Power:
52.55 dBm
Power(W):
180 W
Gain:
15 to 16.8 dB
Supply Voltage:
48 V
more info
Description: Thermally-Enhanced High Power RF GaN on SiC HEMT 370 W, 48 V, 2495 – 2690 MHz
Application Industry:
Cellular
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
Pulse, CW
Frequency:
2.49 to 2.69 GHz
Power:
55.68 dBm
Power(W):
370 W
Gain:
15 dB
Supply Voltage:
48 V
more info
Description: Thermally-Enhanced High Power RF GaN on SiC HEMT 270 W, 48 V, 2110 – 2200 MHz
Application Industry:
Cellular
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
Pulse, CW
Frequency:
2.11 to 2.2 GHz
Power:
54.77 dBm
Power(W):
300 W
Gain:
17.5 to 19 dB
Supply Voltage:
48 V
more info
Description: Thermally-Enhanced High Power RF GaN on SiC HEMT 250 W, 48 V, 2490 – 2690 MHz
Application Industry:
Cellular
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
Pulse, CW
Frequency:
2.49 to 2.69 GHz
Power:
53.98 dBm
Power(W):
250 W
Gain:
13.5 to 14 dB
Supply Voltage:
48 V
more info
Description: Thermally-Enhanced High Power RF GaN on SiC HEMT 270 W, 48 V, 2620 – 2690 MHz
Application Industry:
Cellular
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
Pulse, CW
Frequency:
2.62 to 2.69 GHz
Power:
54.31 dBm
Power(W):
270 W
Gain:
16.5 to 18.1 dB
Supply Voltage:
48 V
more info
Description: 120 W, 8.0 GHz, GaN HEMT Die
Application Industry:
Broadcast, Test & Measurement, Cellular, Wireless ...
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
CW
Frequency:
DC to 8 GHz
Supply Voltage:
28 V (Operating)
more info
Description: Thermally-Enhanced High Power RF LDMOS FET 400 W, 29 V, 2110 – 2180 MHz
Application Industry:
Cellular
Transistor Type:
LDMOS, FET
CW/Pulse:
Pulse, CW
Frequency:
2.11 to 2.18 GHz
Power:
52.04 to 56.02 dBm
Power(W):
160 to 400 W
Gain:
13.7 to 16 dB
Supply Voltage:
28 V
more info
Description: 35 W, DC - 6 GHz, RF Power GaN HEMT
Application Industry:
Broadcast, Test & Measurement, Cellular, Wireless ...
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
CW
Frequency:
DC to 6 GHz
Supply Voltage:
28 V (Operating)
more info
Description: Thermally-Enhanced High Power RF LDMOS FET 50 W, 28 V, 2300 – 2400 MHz
Application Industry:
Cellular
Transistor Type:
LDMOS, FET
CW/Pulse:
Pulse, CW
Frequency:
2.3 to 2.4 GHz
Power:
46.98 dBm
Power(W):
50 W
Gain:
14.2 to 14.6 dB
Supply Voltage:
28 V
more info

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