RF Transistors - Wolfspeed, A Cree Company

109 RF Transistors from Wolfspeed, A Cree Company meet your specification.
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  • Manufacturers : Wolfspeed, A Cree Company
Description:400 W GaN on SiC HEMT from 2500 to 2700 MHz
Application Industry:
Cellular
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
CW, Pulse
Frequency:
2.5 to 2.7 GHz
Power:
56.02 dBm (P3dB)
Power(W):
400 W (P3dB)
Gain:
15 dB
Supply Voltage:
48 V
more info
Description:1000 W LDMOS Transistor from 1030 to 1090 MHz
Application Industry:
Radar
Transistor Type:
FET, LDMOS
CW/Pulse:
Pulse
Power:
59.64 to 60.04 dBm (P1dB), 60.21 to 60.53 dBm (P3d...
Power(W):
920 to 1010 W (P1dB), 1050 to 1130 W (P3dB)
Gain:
17 to 21 dB
Supply Voltage:
50 V
Package:
H-36275-4
more info
Description:GaN-on-SiC HEMT from 3.4 to 4.1 GHz
Application Industry:
Cellular
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
Pulse, CW
Frequency:
3.4 to 4.1 GHz
Power:
53.71 dBm
Power(W):
235 W (P3dB)
Gain:
10 to 11.5 dB
Supply Voltage:
48 V
more info
Description:80 W GaN-on-SiC HEMT from 7.9 to 8.4 GHz
Application Industry:
Broadcast, SATCOM
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
CW, Pulse
Frequency:
7.9 to 8.4 GHz
Power:
45 dBm
Power(W):
31.6 W
Gain:
14.6 to 17 dB
Package:
Flange Ceramic / Metal
more info
Description:400 W Thermally-Enhanced LDMOS Transistor from 2620 to 2690 MHz
Application Industry:
Cellular
Transistor Type:
LDMOS, FET
CW/Pulse:
Pulse, CW
Frequency:
2.62 to 2.69 GHz
Power:
0 to 56.02 dBm (P3dB)
Power(W):
0 to 400 Watt (P3dB)
Gain:
12.5 to 13.5 dB
Supply Voltage:
32 V
more info
Description:400 W Thermally Enhanced LDMOS FET from 2110 to 2180 MHz
Application Industry:
Cellular
Transistor Type:
LDMOS, FET
CW/Pulse:
Pulse, CW
Frequency:
2.11 to 2.18 GHz
Power:
52.04 to 56.02 dBm
Power(W):
160 to 400 W
Gain:
13.7 to 16 dB
Supply Voltage:
28 V
Package:
PG-HB2SOF-8-1
more info
Description:250 Watts GaN on SiC HEMT from 2490 to 2690 MHz
Application Industry:
Cellular
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
Pulse, CW
Frequency:
2.49 to 2.69 GHz
Power:
53.98 dBm
Power(W):
250 W
Gain:
13.5 to 14 dB
Supply Voltage:
48 V
more info
Description:Thermally-Enhanced High Power RF GaN on SiC HEMT from 2620 to 2690 MHz
Application Industry:
Cellular
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
Pulse, CW
Frequency:
2.62 to 2.69 GHz
Power:
54.77 dBm (P3dB)
Power(W):
300 W (P3dB)
Gain:
16 to 18 dB
Supply Voltage:
48 V
more info
Description:120 W GaN HEMT from DC to 8 GHz
Application Industry:
Broadcast, Test & Measurement, Cellular, Wireless ...
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
CW
Frequency:
DC to 8 GHz
Supply Voltage:
28 V
more info
Description:180 W GaN on SiC HEMT from 2700 to 3100 MHz
Application Industry:
Radar
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
CW, Pulse
Frequency:
2700 to 3100 MHz
Power:
52.55 dBm
Power(W):
180 W
Gain:
15 dB
Supply Voltage:
50 V
more info
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