RF Transistor by MACOM (309 more products)

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CGH55030F1/P1 Image

TheCGH55030F1/P1 is a gallium nitride (GaN) high electron mobility RF Transistor (HEMT). It operates at a frequency between 0 to 300 MHz and a gain of 10 dB. This Gan Transistor can provide an output power of up to 30 W GaN has superior properties when compared to silicon or GaAs - It has a higher breakdown voltage, saturated electron drift velocity and thermal condicitivity. This transistor is available in the form of a bare die.

Product Specifications

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Product Details

  • Part Number
  • Manufacturer
  • Description
    30-W, 5500 to 5800-MHz, 28-V, GaN HEMT for WiMAX

General Parameters

  • Transistor Type
  • Technology
    GaN on SiC, GaN
  • Application Industry
    Wireless Infrastructure, Wireless Communication
  • Application
  • CW/Pulse
  • Frequency
    DC to 6 GHz
  • Power
    36.02 dBm
  • Power(W)
    4 W
  • Peak Output Power
    30 W
  • Small Signal Gain
    8.5 to 10 dB
  • VSWR
  • Supply Voltage
    50 V
  • Breakdown Voltage - Drain-Source
    120 V
  • Drain Current
    250 mA
  • Package Type
  • RoHS
  • Storage Temperature
    -65 to 150 Degree C

Technical Documents