TheCGH55030F1/P1 is a gallium nitride (GaN) high electron mobility RF Transistor (HEMT). It operates at a frequency between 0 to 300 MHz and a gain of 10 dB. This Gan Transistor can provide an output power of up to 30 W GaN has superior properties when compared to silicon or GaAs - It has a higher breakdown voltage, saturated electron drift velocity and thermal condicitivity. This transistor is available in the form of a bare die.
