ID25275WD

RF Transistor by RFHIC | Visit website (82 more products)

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The ID25275WD from RFHIC is an Asymmetrical Doherty HEMT that operates from 2520 to 2630 MHz. This transistor delivers a saturated output power of more than 200 W with a gain of 14 dB and has an efficiency of 50%. It is manufactured using GaN-on-SiC technology and includes internally matched components to ensure optimal performance. This RoHS-compliant transistor requires a DC supply of 48 V and consumes less than 80 W of power. It is available in a surface-mount package that measures 11.5 x 15.3 mm and is ideal for Wi-MAX, LTE, WCDMA, multi-band, multi-mode, and multi-carrier applications.

Product Specifications

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Product Details

  • Part Number
    ID25275WD
  • Manufacturer
    RFHIC
  • Description
    200 W Asymmetrical Doherty GaN HEMT from 2520 to 2630 MHz

General Parameters

  • Transistor Type
    HEMT
  • Technology
    GaN on SiC
  • Application Industry
    Wireless Infrastructure, Wireless Communication
  • Application Type
    Doherty Amplifier
  • Application
    4G / LTE, 3G / WCDMA, WiMAX, Cellular
  • CW/Pulse
    Pulse
  • Frequency
    2520 to 2630 MHz
  • Power
    46 dBm
  • Power(W)
    40 W
  • Saturated Power
    200 to 316 W
  • Pulsed Width
    100 us
  • Duty_Cycle
    10 %
  • Gain
    14.1 to 14.5 dB
  • Small Signal Gain
    13 to 14 dB (Modulated Gain)
  • Supply Voltage
    48 to 52 V
  • Threshold Voltage
    -3.75 to -2.25 V
  • Breakdown Voltage - Drain-Source
    150 V
  • Voltage - Drain-Source (Vdss)
    150 V
  • Voltage - Gate-Source (Vgs)
    -10 to 2 V
  • Drain Current
    6 to 9 A (Max)
  • Drain Leakage Current (Id)
    5.8 mA
  • Gate Leakage Current (Ig)
    -4.5 to -3.3 mA
  • Power Dissipation (Pdiss)
    65 to 80 A
  • Matching
    Internally Matched
  • Junction Temperature (Tj)
    225 Degree C
  • Thermal Resistance
    2.14 °C/W
  • Package Type
    Flanged
  • Package
    RF18010DKR3
  • Dimension
    11.5 x 15.3 mm
  • RoHS
    Yes
  • Grade
    Commercial
  • Operating Temperature
    -40 to 150 Degree C
  • Storage Temperature
    -65 to 150 Degree C
  • Note
    ACLR:-29.3 to -25.9 dBc

Technical Documents