The ID25275WD from RFHIC is an Asymmetrical Doherty HEMT that operates from 2520 to 2630 MHz. This transistor delivers a saturated output power of more than 200 W with a gain of 14 dB and has an efficiency of 50%. It is manufactured using GaN-on-SiC technology and includes internally matched components to ensure optimal performance. This RoHS-compliant transistor requires a DC supply of 48 V and consumes less than 80 W of power. It is available in a surface-mount package that measures 11.5 x 15.3 mm and is ideal for Wi-MAX, LTE, WCDMA, multi-band, multi-mode, and multi-carrier applications.
