CLF3H0060-30

RF Transistor by Ampleon (302 more products)

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The CLF3H0060-30 from Ampleon is an Unmatched RF Power Transistor that operates from DC to 6 GHz. It delivers an output power of 30 W with a gain of up to 20 dB and has a power-added efficiency (PAE) of more than 60%. The transistor is based on GaN-SiC HEMT technology and utilizes a thermally enhanced package which supports both CW and pulsed applications. It requires a DC supply of 50 V and draws 60 m of current. The transistor is available in a ceramic package.

Product Specifications

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Product Details

  • Part Number
    CLF3H0060-30
  • Manufacturer
    Ampleon
  • Description
    30 W GaN CW/Pulsed Transistor from DC to 6 GHz

General Parameters

  • Transistor Type
    HEMT
  • Technology
    GaN on SiC
  • Application Industry
    Commercial
  • CW/Pulse
    CW, Pulse
  • Frequency
    DC to 6 GHz
  • Power
    44.77 dBm
  • Power(W)
    30 W
  • Gain
    15.5 to 17 dB
  • Transconductance
    1.22 S
  • Input Return Loss
    -15 dB
  • Breakdown Voltage - Drain-Source
    150 V
  • Voltage - Drain-Source (Vdss)
    50 V
  • Voltage - Gate-Source (Vgs)
    -2.9 V
  • Drain Efficiency
    57 to 61.5 %
  • Drain Current
    3.9 A
  • Gate Leakage Current (Ig)
    43.75 nA
  • Input Capacitance
    6.06 pF
  • Junction Temperature (Tj)
    225 Degree C
  • Output Capacitance
    3.17 pF
  • Grade
    Commercial
  • Storage Temperature
    -65 to 150 Degree C

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