The A2G35S160-01S from NXP Semiconductors is a RF Transistor with Frequency 3.4 to 3.6 GHz, Gain 15.7 dB @ 3500 MHz, Power 45 dBm, P1dB 51 dBm, Supply Voltage 48 V. More details for A2G35S160-01S can be seen below.

Product Specifications

  • Part Number
    A2G35S160-01S
  • Manufacturer
    NXP Semiconductors
  • Description
    3.4 to 3.6 GHz, 45 dBm GaN Transistor, SiC Transistor, LDMOS Transistor
  • Transistor Type
  • Application
    4G, WCDMA
  • Application Type
    Radar, Commercial, Cellular, EMC Testing, Medical, Jammers, Radio, Wireless Infrastructure, Base Stations
  • Class
    AB
  • Grade
    Commercial, Aerospace
  • Frequency
    3.4 to 3.6 GHz
  • Gain
    15.7 dB @ 3500 MHz
  • Power
    45 dBm
  • P1dB
    51 dBm
  • Supply Voltage
    48 V
  • Technology
    GaN
  • Effeciency
    0.367
  • Matching
    Input
  • Thermal Resistance
    1.9 Degree C/W
  • Package Type
    Flanged
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