The A2G35S160-01S from NXP Semiconductors is a RF Transistor with Frequency 3.4 to 3.6 GHz, Gain 15.7 dB @ 3500 MHz, Power 45 dBm, P1dB 51 dBm, Supply Voltage 48 V. More details for A2G35S160-01S can be seen below.
450 Watt, 50 Volt, 3.1 to 3.5 GHz, GaN RF IMFET
15 Watt, 50 Volt, DC to 4 GHz, GaN RF Transistor
15W, 300 MHz to 1.215 GHz, GaN RF Input-Matched Transistor
You can now find similar products from multiple companies on everything RF.