The MHE1003N from NXP Semiconductors is a RF Transistor with Frequency 2.45 GHz, Power 53.42 dBm, Power(W) 219.79 W, P1dB 53.1 dBm, Duty_Cycle 0.1. More details for MHE1003N can be seen below.

Product Specifications

  • Part Number
    MHE1003N
  • Manufacturer
    NXP Semiconductors
  • Description
    RF Power LDMOS Transistor for Consumer and Commercial Cooking, 2450 MHz, 220 W CW, 26 V
  • Transistor Type
    LDMOS
  • Technology
    Si
  • Application Industry
    ISM, RF Energy
  • Application
    ISM Band, Commercial
  • CW/Pulse
    Pulse, CW
  • Frequency
    2.45 GHz
  • Power
    53.42 dBm
  • Power(W)
    219.79 W
  • CW Power
    175 W
  • P1dB
    53.1 dBm
  • Pulsed Width
    100 us
  • Duty_Cycle
    0.1
  • Power Gain (Gp)
    14.1 dB
  • VSWR
    10.00:1
  • Polarity
    N--Channel
  • Supply Voltage
    26 V
  • Threshold Voltage
    1.3 to 2.3 Vdc
  • Voltage - Gate-Source (Vgs)
    -6 to 10 Vdc
  • Drain Efficiency
    0.635
  • Drain Current
    50 mA
  • Impedance Zs
    50 Ohms
  • Thermal Resistance
    0.24 °C/W
  • Package Type
    Flange
  • Package
    OM--780--2L PLASTIC
  • RoHS
    Yes
  • Operating Temperature
    -40 to 150 Degree C
  • Storage Temperature
    -65 to 150 Degree C
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