The MHE1003N from NXP Semiconductors is a RF Transistor with Frequency 2450 MHz, Gain 14.1 dB @ 2450, Power Gain (Gp) 14.1 dB @ 2450, Power 53.1 dBm, P1dB 53.1 dBm, 206 W. More details for MHE1003N can be seen below.

Product Specifications

  • Part Number
    MHE1003N
  • Manufacturer
    NXP Semiconductors
  • Description
    2450 MHz, 53.1 dBm, LDMOS Transistor
  • Transistor Type
  • Application
    ISM Band
  • Application Type
    RF Energy
  • Class
    AB
  • Grade
    Commercial
  • Frequency
    2450 MHz
  • Gain
    14.1 dB @ 2450
  • Power Gain (Gp)
    14.1 dB @ 2450
  • Power
    53.1 dBm
  • P1dB
    53.1 dBm, 206 W
  • Supply Voltage
    26 V
  • Power Added Effeciency
    0.635
  • Effeciency
    0.635
  • Thermal Resistance
    0.24 °C/W
  • Tags
    RF Cooking
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