QPD1009

RF Transistor by Qorvo (92 more products)

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The QPD1009 from Qorvo is a GaN on SiC HEMT that operates from DC to 4 GHz. It provides an output power of 17 W with a gain of 24 dB and has a PAE of 72%. The transistor requires a supply voltage of 50 V and consumes up to 26 mA of current. It is available in a 3 x 3 mm QFN package and is ideal for military radar, jammers, land mobile and military radio communications.

Product Specifications

  • Part Number
    QPD1009
  • Manufacturer
    Qorvo
  • Description
    17 W GaN RF Transistor from DC to 4 GHz
  • Transistor Type
    HEMT
  • Technology
    GaN on SiC
  • Application Industry
    Wireless Infrastructure, Radar, Aerospace & Defence, Test & Measurement
  • Application
    Military, Mobile Radio, Communication, Test Instrumentation, Jammers, Avionics
  • CW/Pulse
    Pulse, CW
  • Frequency
    DC to 4 GHz
  • Power
    41.76 dBm
  • Power(W)
    15 W
  • Saturated Power
    42.3 dBm
  • Pulsed Width
    128 us
  • Duty_Cycle
    0.1
  • Gain
    24 dB
  • Supply Voltage
    12 to 60 V
  • Voltage - Gate-Source (Vgs)
    -2.8 V
  • Drain Bias Current
    26 mA
  • Quiescent Drain Current
    26 mA
  • Package Type
    Surface Mount
  • Package
    3 x 3 mm
  • RoHS
    Yes
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