QPD1009 Image


RF Transistor by Qorvo (88 more products)

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The QPD1009 from Qorvo is a GaN on SiC HEMT that operates from DC to 4 GHz. It provides an output power of 17 W with a gain of 24 dB and has a PAE of 72%. The transistor requires a supply voltage of 50 V and consumes up to 26 mA of current. It is available in a 3 x 3 mm QFN package and is ideal for military radar, jammers, land mobile and military radio communications.

Product Specifications

  • Part Number
  • Manufacturer
  • Description
    17 W GaN RF Transistor from DC to 4 GHz
  • Transistor Type
  • Application Type
    Aerospace, Commercial, Avionics, Test Instrumentation, Communication, Radar
  • Grade
    Aerospace, Commercial, Military
  • Frequency
    1 to 4 GHz
  • Gain
    18.7 to 27 dB
  • Small Signal Gain
    18.7 to 27 dB
  • Power
    41.9 to 42.4 dBm
  • Supply Voltage
    50 V
  • Current
    26 mA
  • Saturated Power
    17 W
  • Package Type
    Surface Mount
  • Package
  • Dimension
    3 x 3 mm
  • RoHS
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