NPT1004D

RF Transistor by MACOM (191 more products)

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NPT1004D Image

The NPT1004 from MACOM is a 45 Watt GaN on Silicon Transistor that operats from DC to 4 GHz. This 28V Transistor has been optimized for  pulsed, WiMAX, W-CDMA, LTE, and other light thermal load applications. It provides 45 watts at P3dB with a gain of 13.5 dB and efficiency of 55%. This GaN HEMT is available in a RoHS compliant surface mount package.

Product Specifications

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Product Details

  • Part Number
    NPT1004D
  • Manufacturer
    MACOM
  • Description
    45 Watt GaN on Silicon RF Transistor

General Parameters

  • Transistor Type
    HEMT
  • Technology
    GaN on Si, GaN
  • Application Industry
    Wireless Infrastructure
  • Application
    WiMax, LTE, WCDMA
  • CW/Pulse
    CW, Pulse
  • Frequency
    DC to 4 GHz
  • Power
    46.53 dBm (p3dB)
  • Power(W)
    44.98 W (p3dB)
  • P1dB
    44.47 dBm
  • Small Signal Gain
    12.5 to 13.5 dB
  • Power Gain (Gp)
    13 dB
  • Supply Voltage
    28 V
  • Threshold Voltage
    -2.3 to -1.3 V
  • Breakdown Voltage - Drain-Source
    100 V
  • Package Type
    Surface Mount
  • Package
    SOIC8NE
  • RoHS
    Yes

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