Note : Your request will be directed to Polyfet RF Devices.
The SQ741 from Polyfet RF Devices is a RF Transistor with Power 46 dBm, Power(W) 50 W, Power Gain (Gp) 11 dB, VSWR 5.00:1, Breakdown Voltage - Drain-Source 125 V. Tags: Flange. More details for SQ741 can be seen below.
5 W GaN Power Transistor from DC to 6 GHz
200 W GaN Power Transistor from 2.7 to 2.9 GHz
500 W GaN HEMT from 2.7 to 3.1 GHz for S-Band Radar Applications
490 W GaN HEMT Transistor from 2.11 to 2.17 GHz
520 W Thermally-Enhanced LDMOS Transistor from 925 to 960 MHz
400 W CW/Pulsed GaN Amplifier from 2.75 to 3.75 GHz
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