ID18275WD

RF Transistor by RFHIC | Visit website (51 more products)

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The ID18275WD from RFHIC is an Asymmetrical Doherty GaN-on-SiC High Electron Mobility Transistor (HEMT) that operates from 1805-1880 MHz. It delivers a saturated output power of 331 W with a gain of 13.8 dB and has an efficiency of 56%. The transistor is internally matched to 50 ohms for improved efficiency and reliability. It requires a DC supply of 48 V. This RoHS-compliant HEMT is available in a flange mount package that measures 0.597 x 0.432 inches and is ideal for multi-carrier, multi-band, multi-mode, Wi-MAX, LTE, and WCDMA applications.

Product Specifications

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Product Details

  • Part Number
    ID18275WD
  • Manufacturer
    RFHIC
  • Description
    275 W Asymmetrical Doherty GaN HEMT from 1805 to 1880 MHz

General Parameters

  • Transistor Type
    HEMT
  • Technology
    GaN on SiC
  • Application Industry
    Cellular, Wi-Fi / Bluetooth
  • Application
    LTE, WCDMA, WiMAX
  • CW/Pulse
    Pulse
  • Frequency
    1805 to 1880 MHz
  • Power
    53.01 to 55.2 dBm (Psat)
  • Power(W)
    200 to 331 W (Psat)
  • Gain
    13.4 to 13.8 dB
  • Supply Voltage
    48 to 52 V
  • Voltage - Drain-Source (Vdss)
    150 V
  • Voltage - Gate-Source (Vgs)
    -10 to 2 V
  • Current
    200 mA
  • Drain Efficiency
    43 to 56 %
  • Drain Leakage Current (Id)
    5.8 mA
  • Gate Leakage Current (Ig)
    -3.3 mA
  • Junction Temperature (Tj)
    225 Degree C
  • Package Type
    Flanged
  • RoHS
    Yes
  • Operating Temperature
    -40 to 150 Degree C
  • Storage Temperature
    -65 to 150 Degree C

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