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ID20275WD

RF Transistor by RFHIC | Visit website (83 more products)
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The ID20275WD from RFHIC is a discrete gallium-nitride on silicon carbide (GaN-on-SiC) high-electron-mobility transistor (HEMT) which operates from 1880 to 2025 MHz. The ID20275WD delivers 282 W of saturated power at 48V, and is designed to provide higher efficiency and linearity. The device is internally matched and is ideally suited for WiMAX, LTE, and WCDMA systems.

Product Specifications

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Product Details

  • Part Number
    ID20275WD
  • Manufacturer
    RFHIC
  • Description
    275 W GaN Asymmetrical Doherty HEMT from 1880 to 2025 MHz

General Parameters

  • Transistor Type
    HEMT
  • Technology
    GaN on SiC
  • Application Industry
    Wireless Infrastructure, Wireless Communication
  • Application
    4G / LTE, 3G / WCDMA, WiMAX, Cellular, Wi-Fi, Bluetooth
  • CW/Pulse
    Pulse
  • Frequency
    1880 to 2025 MHz
  • Power
    53.01 to 54.5 dBm (Psat)
  • Power(W)
    200 to 282 W (Psat)
  • Pulsed Width
    100 us
  • Duty_Cycle
    10 %
  • Gain
    14.8 to 15.3 dB
  • Supply Voltage
    48 to 52 V
  • Voltage - Drain-Source (Vdss)
    150 V
  • Voltage - Gate-Source (Vgs)
    -10 to 2 V
  • Drain Current
    6 A
  • Drain Leakage Current (Id)
    5.8 mA
  • Gate Leakage Current (Ig)
    -3.3 mA
  • Junction Temperature (Tj)
    225 Degree C
  • Package Type
    Flanged
  • RoHS
    Yes
  • Grade
    Commercial
  • Operating Temperature
    -40 to 150 Degree C
  • Storage Temperature
    -65 to 150 Degree C

Technical Documents
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