Ampleon, a global leader in innovative RF solutions built on GaN and LDMOS technologies addressing applications for 5G NR Infrastructure, Industrial, Scientific, Medical, Broadcast, Navigation, and Safety Radio, has developed an advanced GaN Doherty Transistor that operates from 2.3 to 2.7 GHz. The C4H27F700AV is a 700 W GaN on Silicon Carbide HEMT packaged asymmetric Doherty power transistor suitable for base station applications operating in the frequency range from 2496 MHz to 2690 MHz.
The C4H27F700AV combines high efficiency with robust power performance, making it well-suited for both single-carrier and multi-carrier RF power amplifiers. By incorporating GaN-on-SiC technology, the transistor delivers a strong balance of efficiency, linearity, and thermal robustness essential for next-generation networks.
A notable advantage of C4H27F700AV is its excellent digital pre-distortion capability, which enables superior linearity and consistent performance in wideband operation. The transistor also features lower output capacitance, which enhances performance in Doherty amplifier designs, while its internally matched architecture simplifies system integration. Compliance with RoHS standards further ensures that the device meets global environmental and regulatory requirements.
The C4H27F700AV is available in tray packaging with 60 units per dry pack or in TR13 reels with 100 units per 44 mm dry pack. It achieves a nominal output power of 700 W at 5 dB gain compression within the 2515 to 2675 MHz frequency range. It delivers a power gain of 15 dB, operates at a drain-source voltage (VDS) of 52 V, and maintains a quiescent drain current, IDq of 250 mA. The transistor reaches a drain efficiency of 50.2 percent while achieving an adjacent channel power ratio (ACPR) of -25.5 dBc, making it highly efficient for high-capacity wireless base stations.
With its combination of wideband operation, high efficiency, and linearity, the C4H27F700AV enables network operators and system designers to deploy more energy-efficient and cost-effective RF power amplifiers. By extending its GaN-on-SiC portfolio, Ampleon continues to demonstrate its leadership in delivering advanced RF solutions that power the growth of 5G and other high-performance wireless applications.
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