MwT-LN240

Note : Your request will be directed to MicroWave Technology.

MwT-LN240 Image

The MwT-LN240 from MicroWave Technology is a Super Low-Noise Quasi-Enhancement Mode pHEMT Transistor that operates up to 30 GHz. It provides a small signal gain of 13 dB with a noise figure of 0.2 dB (@4 GHz) and has a P1dB of 16 dBm. This pHEMT die has a nominal gate length of 0.15 µm and gate width of 240 µm that makes it suitable for applications requiring very low noise figure and high associated gain. It is available as a die that measures 0.41 x 0.43 x 0.10 mm and is suitable for commercial, military, Hi-Rel space applications.

Product Specifications

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Product Details

  • Part Number
    MwT-LN240
  • Manufacturer
    MicroWave Technology
  • Description
    30 GHz Low-Noise Quasi E-Mode pHEMT Transistor

General Parameters

  • Transistor Type
    FET
  • Application Industry
    Commercial, Military, Space, Wireless Infrastructure
  • Application Type
    Commercial, Military, Space
  • Application
    Commercial, Military
  • CW/Pulse
    CW
  • Frequency
    DC to 30 GHz
  • Power
    16 dBm
  • Power(W)
    0.04 W
  • P1dB
    16 dBm
  • Gain
    10 to 13 dB
  • Small Signal Gain
    10 to 13 dB
  • Noise Figure
    0.2 to 0.5 dB
  • Transconductance
    140 to 180 mS
  • Supply Voltage
    4 V
  • Breakdown Voltage
    -6 to -8 V (Gate Breakdown Voltage)
  • Voltage - Drain-Source (Vdss)
    2.5 V
  • Voltage - Gate-Source (Vgs)
    0.2 to 0.6 V
  • Drain Current
    110 mA
  • Power Dissipation (Pdiss)
    300 to 400 mW
  • Thermal Resistance
    300 ºC/W
  • Package Type
    Chip
  • Dimension
    0.41 x 0.43 x 0.1 mm
  • Grade
    Space Qualified, Commercial, Military
  • Storage Temperature
    -65 to 160 Degree C
  • Note
    RF Input Power: 16 to 30 mW

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