The LS2641 from Polyfet RF Devices is an LDMOS Power Transistor that operates from 1 to 1300 MHz. It delivers a saturated output power of 250 W with a power gain of more than 16 dB and has a drain efficiency of better than 60%. This transistor employs back-to-back gate diodes for enhanced ESD protection and has a high drain breakdown voltage which makes this LDMOS highly rugged. It requires a DC supply of 28 V and consumes 0.5 A of current. The transistor is available in a flanged package that measures 1.1 x 0.77 x 0.17 inches and is ideal for broad-band applications such as communications and broadcast.
