Fill one form and get quotes for cable assemblies from multiple manufacturers
The MMRF1014N from NXP Semiconductors is a RF Transistor with Frequency 1 MHz to 2 GHz, Power 36.02 dBm, Power(W) 4 W, P1dB 36 dBm, Duty_Cycle 0.1. Tags: Flange. More details for MMRF1014N can be seen below.
450 W GaN-on-SiC HEMT from 758 to 960 MHz
700 W GaN HEMT from 0.9 to 1.4 GHz for Avionics Application
10 W Surface-Mount GaN HEMT from DC to 8 GHz
5 W Surface-Mount LDMOS FET from 900 to 2700 MHz
6 W GaN Transistor Die from 10 MHz to 18 GHz
500 W GaN HEMT from 2.7 to 3.1 GHz for S-Band Radar Applications
410 W GaN-on-SiC HEMT from 3600 to 3800 MHz
Click to see all the sectors that we cover
Copyright 2020 © everything RF All Rights Reseverd  |
Create an account on everything RF to get a range of benefits.
Login to everything RF to download datasheets, white papers and more content.