MMRF1014N Image

MMRF1014N

The MMRF1014N from NXP Semiconductors is a RF Transistor with Frequency 1 MHz to 2 GHz, Power 36.02 dBm, Power(W) 4 W, P1dB 36 dBm, Duty_Cycle 0.1. Tags: Flange. More details for MMRF1014N can be seen below.

Product Specifications

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Product Details

  • Part Number
    MMRF1014N
  • Manufacturer
    NXP Semiconductors
  • Description
    LATERAL N--CHANNEL RF POWER LDMOS TRANSISTOR, 36526 MHz, 4 W, 28 V

General Parameters

  • Transistor Type
    LDMOS
  • Technology
    Si
  • Application Industry
    Aerospace & Defence
  • Application
    Avionics
  • CW/Pulse
    Pulse
  • Frequency
    1 MHz to 2 GHz
  • Power
    36.02 dBm
  • Power(W)
    4 W
  • CW Power
    4 W
  • P1dB
    36 dBm
  • Pulsed Width
    128 us
  • Duty_Cycle
    0.1
  • Power Gain (Gp)
    16.5 to 20 dB
  • Input Return Loss
    -12 to -10 dB
  • VSWR
    5.00:1
  • Polarity
    N-Channel
  • Supply Voltage
    28 V
  • Threshold Voltage
    1.2 to 2.7 Vdc
  • Voltage - Gate-Source (Vgs)
    -0.5 to 12 Vdc
  • Drain Efficiency
    0.33
  • Drain Current
    50 mA
  • Impedance Zs
    50 Ohms
  • Thermal Resistance
    8.8 °C/W
  • Package Type
    Flange
  • Package
    PLD--1.5 PLASTIC
  • RoHS
    Yes
  • Operating Temperature
    150 Degree C
  • Storage Temperature
    -65 to 150 Degree C

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