EGN26C160I2D Image

EGN26C160I2D

RF Transistor by Sumitomo Electric Device Innovations (269 more products)

Note : Your request will be directed to Sumitomo Electric Device Innovations.

The EGN26C160I2D from Sumitomo Electric Device Innovations is a RF Transistor with Frequency 2.6 GHz, Power 49.5 dBm, Power(W) 89.13 W, Saturated Power 51.5 to 52.5 dBm, Power Gain (Gp) 15 to 16 dB. Tags: Flanged. More details for EGN26C160I2D can be seen below.

Product Specifications

    Product Details

    • Part Number :
      EGN26C160I2D
    • Manufacturer :
      Sumitomo Electric Device Innovations
    • Description :
      2.6 GHz, Gain GaN on SiC HEMT

    General Parameters

    • Transistor Type :
      HEMT
    • Technology :
      GaN on SiC
    • Application Industry :
      Wireless Infrastructure
    • Application Type :
      L Band
    • Application :
      Base Station, LTE
    • Frequency :
      2.6 GHz
    • Power :
      49.5 dBm
    • Power(W) :
      89.13 W
    • Saturated Power :
      51.5 to 52.5 dBm
    • Power Gain (Gp) :
      15 to 16 dB
    • Supply Voltage :
      50 V
    • Voltage - Drain-Source (Vdss) :
      50 V
    • Voltage - Gate-Source (Vgs) :
      -15 V
    • Drain Efficiency :
      25 to 30%
    • Power Dissipation (Pdiss) :
      132 W
    • Thermal Resistance :
      1.4 to 1.6 Degree C/W
    • Package Type :
      Flanged
    • RoHS :
      Yes
    • Storage Temperature :
      -65 to 175 Degree C
    • Note :
      Forward Gate Current : 153 mA, Reverse Gate Current : -5.8 mA

    Technical Documents

Click to view more product details on manufacturer's website  »

Need Help?

x
Let us know what you need, we can help find products that meet your requirement.