The MRF6V13250H from NXP Semiconductors is a RF Transistor with Frequency 960 MHz to 1.5 GHz, Power 53.98 dBm, Power(W) 250.03 W, P1dB 54 dBm, Duty_Cycle 0.1. More details for MRF6V13250H can be seen below.

Product Specifications

  • Part Number
    MRF6V13250H
  • Manufacturer
    NXP Semiconductors
  • Description
    Lateral N-Channel RF Power MOSFET, 1300 MHz, 250 W, 50 V
  • Transistor Type
    LDMOS
  • Technology
    Si
  • Application Industry
    Aerospace & Defence
  • Application
    Avionics
  • CW/Pulse
    Pulse
  • Frequency
    960 MHz to 1.5 GHz
  • Power
    53.98 dBm
  • Power(W)
    250.03 W
  • P1dB
    54 dBm
  • Pulsed Width
    200 us
  • Duty_Cycle
    0.1
  • Power Gain (Gp)
    21.5 to 24 dB
  • Input Return Loss
    -18 to -9 dB
  • VSWR
    10.00:1
  • Supply Voltage
    50 V
  • Threshold Voltage
    1 to 2.7 Vdc
  • Breakdown Voltage - Drain-Source
    120 V
  • Voltage - Gate-Source (Vgs)
    -6 to 10 Vdc
  • Drain Efficiency
    0.57
  • Drain Current
    100 mA
  • Impedance Zs
    50 Ohms
  • Thermal Resistance
    0.07 °C/W
  • Package Type
    Flange
  • Package
    CASE 465--06, STYLE 1 NI--780
  • RoHS
    Yes
  • Operating Temperature
    150 Degree C
  • Storage Temperature
    -65 to 150 Degree C
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