BLSC9G2731XS-200 Image

BLSC9G2731XS-200

RF Transistor by Ampleon (252 more products)

Note : Your request will be directed to Ampleon.

The BLSC9G2731XS-200 from Ampleon is an LDMOS power transistor that operates from 2.7 to 3.1 GHz. It provides an output power of 200 watts with a gain of 14 dB and drain efficiency of 45%. The transistor requires a supply voltage of 32 V and is ideal for S-Band radar applications. It is internally matched and has high flexibility with respect to pulse output formats. The transistor is available in a flanged ceramic package.

Product Specifications

    Product Details

    • Part Number :
      BLSC9G2731XS-200
    • Manufacturer :
      Ampleon
    • Description :
      200 W LDMOS Power Transistor for S-band Radar Applications

    General Parameters

    • Transistor Type :
      LDMOS
    • Technology :
      Si
    • Application Industry :
      Radar
    • CW/Pulse :
      Pulse
    • Frequency :
      2700 to 3100 MHz
    • Power :
      53 dBm
    • Power(W) :
      200 W
    • Gain :
      14 dB
    • Input Return Loss :
      10 dB
    • Supply Voltage :
      32 V
    • Threshold Voltage :
      1.5 to 2.5 V
    • Breakdown Voltage - Drain-Source :
      65 V
    • Drain Efficiency :
      41 to 45 %
    • Leakage Current :
      2.8 uA
    • RoHS :
      Yes
    • Storage Temperature :
      -65 to 150 Degrees C

    Technical Documents

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