The AFT31150N from NXP is a RF Power LDMOS Transistor that operates from 2700 to 3100 MHz. This transistor has been developed for use in Pulsed Applications. It provides 150 watts of pulsed power with a gain of 17.2 dB and a 15% dutycycle. It requires a 32 V supply and is internally matched. The Transistor can be used in commercial S-Band radar systems, maritime radars, weather radars and other pulse applications.

Product Specifications

    Product Details

    • Part Number :
      AFT31150N
    • Manufacturer :
      NXP Semiconductors
    • Description :
      150 Watts Pulsed LDMOS Transistor from 2700 to 3100 MHz

    General Parameters

    • Transistor Type :
      LDMOS
    • Technology :
      Si
    • Application Industry :
      Wireless Infrastructure, Aerospace & Defence, Radar
    • Application :
      S Band, Radar
    • CW/Pulse :
      Pulse
    • Frequency :
      2.7 to 3.1 GHz
    • Power(W) :
      151.36 W
    • P1dB :
      51.8 dBm
    • Peak Output Power :
      150 W
    • Pulsed Power :
      150 W
    • Pulsed Width :
      300 us
    • Duty_Cycle :
      0.15
    • Power Gain (Gp) :
      15 to 19 dB
    • Input Return Loss :
      -19 to -9 dB
    • VSWR :
      10.00:1
    • Polarity :
      N-Channel
    • Supply Voltage :
      32 V
    • Threshold Voltage :
      0.8 to 1.6 Vdc
    • Breakdown Voltage - Drain-Source :
      65 V
    • Voltage - Gate-Source (Vgs) :
      -6 to 10 Vdc
    • Drain Efficiency :
      0.5
    • Drain Current :
      100 mA
    • Impedance Zs :
      50 Ohms
    • Thermal Resistance :
      0.042 °C/W
    • Package Type :
      Flange
    • Package :
      OM--780--2L PLASTIC
    • RoHS :
      Yes
    • Operating Temperature :
      -40 to 150 Degree C
    • Storage Temperature :
      -65 to 150 Degree C

    Technical Documents

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