The AFT31150N from NXP is a RF Power LDMOS Transistor that operates from 2700 to 3100 MHz. This transistor has been developed for use in Pulsed Applications. It provides 150 watts of pulsed power with a gain of 17.2 dB and a 15% dutycycle. It requires a 32 V supply and is internally matched. The Transistor can be used in commercial S-Band radar systems, maritime radars, weather radars and other pulse applications.

Product Specifications

  • Part Number
    AFT31150N
  • Manufacturer
    NXP Semiconductors
  • Description
    150 Watts Pulsed LDMOS Transistor from 2700 to 3100 MHz
  • Transistor Type
    LDMOS
  • Technology
    Si
  • Application Industry
    Wireless Infrastructure, Aerospace & Defence, Radar
  • Application
    S Band, Radar
  • CW/Pulse
    Pulse
  • Frequency
    2.7 to 3.1 GHz
  • Power(W)
    151.36 W
  • P1dB
    51.8 dBm
  • Peak Output Power
    150 W
  • Pulsed Power
    150 W
  • Pulsed Width
    300 us
  • Duty_Cycle
    0.15
  • Power Gain (Gp)
    15 to 19 dB
  • Input Return Loss
    -19 to -9 dB
  • VSWR
    10.00:1
  • Polarity
    N-Channel
  • Supply Voltage
    32 V
  • Threshold Voltage
    0.8 to 1.6 Vdc
  • Breakdown Voltage - Drain-Source
    65 V
  • Voltage - Gate-Source (Vgs)
    -6 to 10 Vdc
  • Drain Efficiency
    0.5
  • Drain Current
    100 mA
  • Impedance Zs
    50 Ohms
  • Thermal Resistance
    0.042 °C/W
  • Package Type
    Flange
  • Package
    OM--780--2L PLASTIC
  • RoHS
    Yes
  • Operating Temperature
    -40 to 150 Degree C
  • Storage Temperature
    -65 to 150 Degree C
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