The AFT31150N from NXP is a RF Power LDMOS Transistor that operates from 2700 to 3100 MHz. This transistor has been developed for use in Pulsed Applications. It provides 150 watts of pulsed power with a gain of 17.2 dB and a 15% dutycycle. It requires a 32 V supply and is internally matched. The Transistor can be used in commercial S-Band radar systems, maritime radars, weather radars and other pulse applications.
300 W RF Power GaN Transistor for Cooking Applications
5 W LDMOS Integrated Doherty MMIC from 859 to 960 MHz
130 W GaN HEMT from DC to 3 GHz
20 W GaN on SiC HEMT from DC to 5 GHz
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