CG2H40010P

Note : Your request will be directed to Wolfspeed.

CG2H40010P Image

The CG2H40010P from Wolfspeed is a GaN High Electron Mobility Transistor (HEMT) that operates from DC to 8 GHz. It delivers an output power of 10 W with a small signal gain of more than 15 dB and a drain efficiency of 70%. This transistor requires a DC supply of 28 V and is suitable for linear and compressed amplifier circuits. It is available in both screw-down, flange, and solder-down, pill packages and is ideal for use in 2-way private radio, broadband amplifiers, cellular infrastructure, test instrumentation, and Class A, AB, linear amplifiers (for OFDM, W-CDMA, EDGE, CDMA waveforms).

Product Specifications

View similar products

Product Details

  • Part Number
    CG2H40010P
  • Manufacturer
    Wolfspeed
  • Description
    10 W Surface-Mount GaN HEMT from DC to 8 GHz

General Parameters

  • Transistor Type
    HEMT
  • Technology
    GaN on SiC
  • Application Industry
    Cellular, Test & Measurement
  • Application
    Broadband Amplifiers, Private mobile radio handsets
  • CW/Pulse
    CW
  • Frequency
    DC to 8 GHz
  • Saturated Power
    17 W
  • Small Signal Gain
    16 to 18 dB
  • Supply Voltage
    28 V
  • Breakdown Voltage - Drain-Source
    84 V
  • Voltage - Drain-Source (Vdss)
    120 V
  • Voltage - Gate-Source (Vgs)
    -10 to 2 V
  • Drain Efficiency
    60 to 70 %
  • Drain Current
    1.5 A
  • Quiescent Drain Current
    2.59 to 3.6 A
  • Power Dissipation (Pdiss)
    14 W
  • Feedback Capacitance
    0.186 pF
  • Input Capacitance
    4.19 pF
  • Junction Temperature (Tj)
    225 Degree C
  • Output Capacitance
    1.84 pF
  • Thermal Resistance
    7.83 ºC/W
  • Dimension
    0.36 X 0.205 x 0.165 in.
  • RoHS
    Yes
  • Grade
    Commercial
  • Operating Temperature
    -40 to 150 Degree C
  • Storage Temperature
    -65 to 150 Degree C

Technical Documents