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The GD010 from Gallium Semiconductor is a RF Transistor with Frequency DC to 8 GHz, Power 41.76 dBm, Power(W) 15 W, Saturated Power 11 to 15 W, Gain 16.5 to 17.8 dB. Tags: Die. More details for GD010 can be seen below.
400 W, GaN on SiC HEMT from DC to 2.9 GHz
410 W Doherty GaN-on-SiC HEMT from 3700 to 4100 MHz
450 W GaN-on-SiC HEMT from 758 to 960 MHz
500 W GaN HEMT from 2.7 to 3.1 GHz for S-Band Radar Applications
25 W Surface-Mount LDMOS FET from 500 to 1400 MHz
5 W Surface-Mount LDMOS FET from 900 to 2700 MHz
50 W GaN-on-SiC HEMT from 2515 to 2675 MHz
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