SM746

Note : Your request will be directed to Polyfet RF Devices.

SM746 Image

The SM746 from Polyfet RF Devices is a RF Transistor with Power 52 dBm, Power(W) 175 W, Power Gain (Gp) 13 dB, VSWR 5.00:1, Breakdown Voltage - Drain-Source 125 V. Tags: Flanged. More details for SM746 can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    SM746
  • Manufacturer
    Polyfet RF Devices
  • Description
    175 W, Si VDMOS Power Transistor

General Parameters

  • Transistor Type
    VDMOS
  • Technology
    Si
  • Application Industry
    Aerospace & Defence, Broadcast
  • Application
    Radio, Cellular, Base Stations, MRI
  • Power
    52 dBm
  • Power(W)
    175 W
  • Power Gain (Gp)
    13 dB
  • Transconductance
    4.8 MOhms
  • VSWR
    5.00:1
  • Drain Gate Voltage
    125 V
  • Breakdown Voltage - Drain-Source
    125 V
  • Voltage - Drain-Source (Vdss)
    50 V
  • Voltage - Gate-Source (Vgs)
    30 V
  • Drain Efficiency
    0.65
  • Drain Current
    11 A
  • Drain Bias Current
    6 mA
  • Quiescent Drain Current
    0.6 A
  • Gate Leakage Current (Ig)
    1 uA
  • Power Dissipation (Pdiss)
    270 W
  • Feedback Capacitance
    1.2 pF
  • Input Capacitance
    288 pF
  • Junction Temperature (Tj)
    200 Degree C
  • Output Capacitance
    102 pF
  • Thermal Resistance
    0.65 Degree C/W
  • Package Type
    Flanged
  • RoHS
    Yes
  • Storage Temperature
    -65 to 150 Degree C

Technical Documents