Fill one form and get quotes for cable assemblies from multiple manufacturers
Note : Your request will be directed to Polyfet RF Devices.
The SM746 from Polyfet RF Devices is a RF Transistor with Power 52 dBm, Power(W) 175 W, Power Gain (Gp) 13 dB, VSWR 5.00:1, Breakdown Voltage - Drain-Source 125 V. Tags: Flanged. More details for SM746 can be seen below.
13.8 W Doherty GaN Power Transistor from 2.3 to 2.4 GHz for 5G Base Stations
400 W, GaN on SiC HEMT from DC to 2.9 GHz
410 W Doherty GaN-on-SiC HEMT from 3700 to 4100 MHz
25 W Surface-Mount LDMOS FET from 500 to 1400 MHz
500 W GaN-on-SiC HEMT from 2515 to 2675 MHz
450 W GaN-on-SiC HEMT from 758 to 960 MHz
10 W Surface-Mount GaN HEMT from DC to 8 GHz
Click to see all the sectors that we cover
Copyright 2020 © everything RF All Rights Reseverd  |
Create an account on everything RF to get a range of benefits.
Login to everything RF to download datasheets, white papers and more content.