Note : Your request will be directed to Polyfet RF Devices.
The SA741 from Polyfet RF Devices is a RF Transistor with Power 45 dBm, Power(W) 35 W, Power Gain (Gp) 16 dB, VSWR 5.00:1, Breakdown Voltage - Drain-Source 125 V. Tags: Flange. More details for SA741 can be seen below.
200 W GaN Power Transistor from 2.7 to 2.9 GHz
500 W GaN HEMT from 2.7 to 3.1 GHz for S-Band Radar Applications
60 W GaN HEMT Operates up to 7 GHz
800 W RF LDMOS Transistor from 730 to 960 MHz
400 W CW/Pulsed GaN Amplifier from 2.75 to 3.75 GHz
520 W Thermally-Enhanced LDMOS Transistor from 925 to 960 MHz
500 W GaN HEMT from 2.9 to 3.5 GHz for S-Band Radar Systems
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