CHK015A-QIA Image

CHK015A-QIA

Note : Your request will be directed to United Monolithic Semiconductors.

The CHK015A-QIA from United Monolithic Semiconductors is a RF Transistor with Frequency DC to 6 GHz, Power 41.76 dBm, Power(W) 15 W, Saturated Power 15 to 20 W, Gain 18 to 20 dB. Tags: Surface Mount. More details for CHK015A-QIA can be seen below.

Product Specifications

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Product Details

  • Part Number
    CHK015A-QIA
  • Manufacturer
    United Monolithic Semiconductors
  • Description
    DC to 6 GHz Low Noise GaN on SiC HEMT

General Parameters

  • Transistor Type
    HEMT
  • Technology
    GaN on SiC
  • Application Industry
    Radar, Wireless Infrastructure
  • CW/Pulse
    Pulse, CW
  • Frequency
    DC to 6 GHz
  • Power
    41.76 dBm
  • Power(W)
    15 W
  • Saturated Power
    15 to 20 W
  • Gain
    18 to 20 dB
  • Power Added Effeciency
    0.6
  • Supply Voltage
    50 V
  • Drain Gate Voltage
    180 V
  • Breakdown Voltage - Drain-Source
    50 V
  • Voltage - Gate-Source (Vgs)
    -1.9 V
  • Drain Current
    0.65 A
  • Quiescent Drain Current
    0.1 to 0.35 A
  • Gate Leakage Current (Ig)
    -0.8 mA
  • Junction Temperature (Tj)
    200 Degree C
  • Thermal Resistance
    6 Degree C/W
  • Package Type
    Surface Mount
  • RoHS
    Yes
  • Storage Temperature
    -55 to 150 Degree C
  • Note
    Gate Currnet Forward Mode : 0 to 24 mA, Pich Off Voltage : -3 to -1 V, Saturated Drain Current : 2.7 A

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