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MGFK45G3745A

RF Transistor by Mitsubishi Electric US, Inc.
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The MGFK45G3745A from Mitsubishi Electric US, Inc. is a RF Transistor with Frequency 13.75 to 14.5 GHz, Power 44.3 to 45.3 dBm, Power(W) 26.91 to 33.88 W, Power Gain (Gp) 8.5 to 9.5 dB, Power Added Effeciency 30%. Tags: Flanged. More details for MGFK45G3745A can be seen below.

Product Specifications

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Product Details

  • Part Number
    MGFK45G3745A
  • Manufacturer
    Mitsubishi Electric US, Inc.
  • Description
    30 W, GaN HEMT from 13.75 to 14.5 for SATCOM Earth Station

General Parameters

  • Transistor Type
    HEMT
  • Technology
    GaN on SiC
  • Application Industry
    SATCOM
  • Application
    Ku-Band, Industrial, General Purpose, Base Station
  • CW/Pulse
    CW
  • Frequency
    13.75 to 14.5 GHz
  • Power
    44.3 to 45.3 dBm
  • Power(W)
    26.91 to 33.88 W
  • Power Gain (Gp)
    8.5 to 9.5 dB
  • Power Added Effeciency
    30%
  • Class
    Class AB
  • Supply Voltage
    27 V
  • Input Power
    41 dBm
  • Voltage - Gate-Source (Vgs)
    -5 to -1 V
  • Current
    14.4 mA
  • Drain Current
    0.72 A
  • Power Dissipation (Pdiss)
    112 W
  • Thermal Resistance
    1.6 to 2 Degree C/W
  • Package Type
    Flanged
  • Package
    GF-68
  • RoHS
    Yes
  • Grade
    Commercial
  • Storage Temperature
    -55 to 125 Degree C

Technical Documents
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