MGFK45G3745A

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The MGFK45G3745A from Mitsubishi Electric is a GaN HEMT that operates from 13.75 to 14.5 GHz. It delivers an output power of 30 W with a power gain of 9.5 dB and has a power added efficiency (PAE) of 30%. The transistor has an N-channel Schottky gate and is designed for use in Class AB linear amplifiers. It is available in an internally matched surface-mount GF-68 package that measures 21.0 x 12.9 x 4.0 mm and requires a DC supply of 24 V. The transistor is ideal for use as an amplifier in Ku-band satellite communication (SATCOM) earth stations.

Product Specifications

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Product Details

  • Part Number
    MGFK45G3745A
  • Manufacturer
    Mitsubishi Electric US, Inc.
  • Description
    30 W GaN HEMT from 13.75 to 14.5 GHz for SATCOM Earth Stations

General Parameters

  • Transistor Type
    HEMT
  • Technology
    GaN on SiC, GaN
  • Application Industry
    SATCOM
  • Application
    Ku-Band, Industrial, General Purpose, Base Station
  • CW/Pulse
    CW
  • Frequency
    13.75 to 14.5 GHz
  • Power
    44.3 to 45.3 dBm
  • Power(W)
    26.91 to 33.88 W
  • Power Gain (Gp)
    8.5 to 9.5 dB
  • Power Added Effeciency
    30%
  • Class
    Class AB
  • Supply Voltage
    24 to 27 V
  • Input Power
    41 dBm
  • Voltage - Drain-Source (Vdss)
    27 V
  • Voltage - Gate-Source (Vgs)
    -5 to -1 V
  • Current
    14.4 mA
  • Drain Current
    0.72 A
  • Power Dissipation (Pdiss)
    112 W
  • Thermal Resistance
    1.6 to 2 C/W
  • Package Type
    Flanged
  • Package
    GF-68
  • Dimension
    21 x 12.9 x 4 mm
  • RoHS
    Yes
  • Grade
    Commercial
  • Operating Temperature
    0 to 85 Degree C
  • Storage Temperature
    -55 to 125 Degree C

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