CHZ180A-SEB Image

CHZ180A-SEB

Note : Your request will be directed to United Monolithic Semiconductors.

The CHZ180A-SEB from United Monolithic Semiconductors is a RF Transistor with Frequency 1.2 to 1.4 GHz, Power 52.55 dBm, Power(W) 180 W, Saturated Power 52 to 54 W, Duty_Cycle 0.1. Tags: Flange, Ceramic. More details for CHZ180A-SEB can be seen below.

Product Specifications

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Product Details

  • Part Number
    CHZ180A-SEB
  • Manufacturer
    United Monolithic Semiconductors
  • Description
    1.2 to 1.4 GHz Low Noise GaN on SiC HEMT

General Parameters

  • Transistor Type
    HEMT
  • Technology
    GaN on SiC
  • Application Industry
    Radar, Wireless Infrastructure
  • Application
    L Band
  • CW/Pulse
    Pulse, CW
  • Frequency
    1.2 to 1.4 GHz
  • Power
    52.55 dBm
  • Power(W)
    180 W
  • Saturated Power
    52 to 54 W
  • Pulsed Width
    1.5 mS
  • Duty_Cycle
    0.1
  • Small Signal Gain
    20 dB
  • Supply Voltage
    45 V
  • Drain Gate Voltage
    200 V
  • Breakdown Voltage - Drain-Source
    20 to 45 V
  • Voltage - Gate-Source (Vgs)
    -1.9 V
  • Drain Current
    9.6 A
  • Quiescent Drain Current
    1.3 to 3 A
  • Gate Leakage Current (Ig)
    -10 mA
  • Junction Temperature (Tj)
    200 Degree C
  • Thermal Resistance
    0.75 Degree C/W
  • Package Type
    Flange, Ceramic
  • RoHS
    Yes
  • Storage Temperature
    -55 to 150 Degree C
  • Note
    Gate Currnet Forward Mode : 0 to 64 mA, Pich Off Voltage : -3 to -1 V, Saturated Drain Current : 30 A

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