RF Transistors

335 RF Transistors from 2 Manufacturers meet your specification.
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  • Manufacturers: Gallium Semiconductor, Ampleon
Description:2500 W Pulsed LDMOS Power Transistor from 1 to 400 MHz
Application Industry:
Wireless Infrastructure, ISM, Broadcast, Cellular
Transistor Type:
LDMOS
CW/Pulse:
CW, Pulse
Frequency:
1 to 400 MHz
Package Type:
Flanged
Supply Voltage:
75 V
more info
Description:150 W GaN HEMT from 1 to 1.4 GHz
Application Industry:
SATCOM, Avionics, Radar
Transistor Type:
HEMT
Technology:
GaN
CW/Pulse:
Pulse
Frequency:
1 to 1.4 GHz
Power:
51.4 to 51.76 dBm
Package Type:
Surface Mount
Power(W):
141 to 150 W
Gain:
15.2 to 15.7 dB
Supply Voltage:
50 V
Package:
6-Pin DFN
more info
Description:50 W LDMOS Dual-Stage Doherty Transistor MMIC from 700 MHz to 1 GHz
Application Industry:
Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW, Pulse
Frequency:
0.7 to 1 GHz
Power:
47 dBm
Package Type:
Surface Mount
Supply Voltage:
48 V
Package:
34 Pin-LGA
more info
Description:135 W GaN on SiC HEMT from DC to 3.2 GHz
Application Industry:
Radar, Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN, GaN on SiC
CW/Pulse:
CW, Pulse
Frequency:
DC to 3.2 GHz
Power:
52.15 dBm
Package Type:
Die
Power(W):
164.06 W
Gain:
15.4 to 20.2 dB
Supply Voltage:
50 V
more info
Description:LDMOS 2-Stage Integrated Doherty MMIC Transistor from 1.805 to 1.88 GHz
Application Industry:
Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW, Pulse
Frequency:
1.805 to 1.88 GHz
Power:
38.5 to 39.6 dBm (P3dB)
Package Type:
Surface Mount
Power(W):
7.08 to 9.12 W
Supply Voltage:
28 V
more info
Description:80 W GaN on SiC HEMT from DC to 3.7 GHz
Application Industry:
Radar, Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN, GaN on SiC
CW/Pulse:
CW, Pulse
Frequency:
DC to 3.7 GHz
Power:
50 dBm
Package Type:
Die
Power(W):
100 W
Gain:
14.5 to 15.5 dB
Supply Voltage:
50 V
more info
Description:LDMOS 2-Stage Integrated Doherty MMIC Transistor from 1.88 to 2.025 GHz
Application Industry:
Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW, Pulse
Frequency:
1.88 to 2.025 GHz
Power:
38.5 to 39.6 dBm (P3dB)
Package Type:
Surface Mount
Power(W):
7.08 to 9.12 W
Supply Voltage:
28 V
more info
Description:110 W CW/Pulsed GaN HEMT from DC to 3.7 GHz
Application Industry:
Communication, Radar, Test & Measurement, Wireless...
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
CW, Pulse
Frequency:
DC to 3.7 GHz
Power:
50.4 dBm
Package Type:
Flanged
Gain:
15 to 23 dB
Supply Voltage:
50 V
Package:
NI-360 Ceramic Package
more info
Description:LDMOS 2-Stage Integrated Doherty MMIC Transistor from 2.11 to 2.17 GHz
Application Industry:
Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW, Pulse
Frequency:
2.11 to 2.17 GHz
Power:
38.5 to 39.2 dBm (P3dB)
Package Type:
Surface Mount
Power(W):
7.08 to 8.32 W
Supply Voltage:
28 V
more info
GTH2e-2425300P Image
Description:300 W High-Efficiency GaN Amplifier from 2.4 to 2.5 GHz
Application Industry:
ISM, Radar, Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
CW
Frequency:
2400 to 2500 MHz
Power:
54.77 dBm
Package Type:
Flanged
Power(W):
300 W
Gain:
17 dB
Supply Voltage:
50 V
more info

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