RF Transistors

315 RF Transistors from 2 Manufacturers meet your specification.
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  • Manufacturers: Gallium Semiconductor, Ampleon
Description:700 W GaN HEMT from 0.9 to 1.4 GHz for Avionics Application
Application Industry:
Avionics
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
CW, Pulse
Frequency:
0.9 to 1.4 GHz
Power:
58.6 to 59.03 dBm
Power(W):
725 to 800 W
Supply Voltage:
50 V
more info
Description:200 W, GaN on SiC HEMT from DC to 3.2 GHz
Application Industry:
Cellular, Radar, Test & Measurement
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
CW, Pulse
Frequency:
DC to 3.2 GHz
Gain:
18.4 dB
Supply Voltage:
50 V
more info
Description:850 W LDMOS Doherty Power Transistor from 617 to 960 MHz
Application Industry:
Base Station
Transistor Type:
LDMOS
CW/Pulse:
CW, Pulse
Frequency:
617 to 960 MHz
Power:
59.29 dBm
Power(W):
850 W
Supply Voltage:
48 V
Package:
Plastic Earless Flang 6 Leads
more info
Description:250 W, GaN on SiC HEMT from DC to 2.9 GHz
Application Industry:
Cellular, Radar, Test & Measurement
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
CW, Pulse
Frequency:
DC to 2.9 GHz
Gain:
18.6 dB
Supply Voltage:
50 V
more info
Description:100 W GaN-Based Doherty Power Transistor from 2.3 to 2.7 GHz
Application Industry:
Wireless Infrastructure
Technology:
GaN
CW/Pulse:
CW, Pulse
Frequency:
2300 to 2700 MHz
Power:
41.5 dBm
Power(W):
14.12 W
Supply Voltage:
50 V
more info
Description:300 W, GaN on SiC HEMT from DC to 2.9 GHz
Application Industry:
Cellular, Radar, Test & Measurement
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
CW, Pulse
Frequency:
DC to 2.9 GHz
Gain:
18 dB
Supply Voltage:
50 V
more info
Description:500 W HF/VHF LDMOS Transistor from 10 to 700 MHz
Application Industry:
Broadcast, Wireless Infrastructure
Transistor Type:
LDMOS
CW/Pulse:
CW
Frequency:
10 to 700 MHz
Power:
57 dBm
Power(W):
500 W
Supply Voltage:
50 V
more info
Description:400 W, GaN on SiC HEMT from DC to 2.9 GHz
Application Industry:
Cellular, Radar, Test & Measurement
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
CW, Pulse
Frequency:
DC to 2.9 GHz
Gain:
17.8 dB
Supply Voltage:
50 V
more info
Description:Dual-Path 2-Stage Doherty LDMOS FET from 2.3 to 2.7 GHz
Application Industry:
Cellular, Wireless Infrastructure
Transistor Type:
LDMOS
Frequency:
2.3 to 2.7 GHz
Power:
48 to 49.5 dBm (P3dB)
Power(W):
63 to 89.12 W (P3dB)
Supply Voltage:
28 V
Package:
PQFN
more info
Description:20 W GaN on SiC HEMT from DC to 7 GHz
Application Industry:
Cellular, Radar
Transistor Type:
HEMT
Technology:
GaN, GaN on SiC
CW/Pulse:
CW, Pulse
Frequency:
DC to 7 GHz
Power:
44.77 dBm
Power(W):
29.99 W
Gain:
15.2 to 17.2 dB
Supply Voltage:
50 V
more info

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