BLM9D0910-05AM Image

BLM9D0910-05AM

RF Transistor by Ampleon

Note : Your request will be directed to Ampleon.

The BLM9D0910-05AM from Ampleon is a 1-Stage LDMOS Integrated Doherty MMIC that operates from 859 to 960 MHz. It delivers an output power of 5 W with a power gain of 18 dB and an efficiency of 38.4% while operating at a supply voltage of 28 V. The carrier and peaking device, input splitter, output combiner, and pre-match are integrated into a single package, along with an ESD protection circuit. The amplifier is available in a LGA outline package and is ideal for multi-carrier and multi-standard GSM, W-CDMA, LTE and NR small cell base stations.

Product Specifications

View similar products

Product Details

  • Part Number
    BLM9D0910-05AM
  • Manufacturer
    Ampleon
  • Description
    5 W LDMOS Integrated Doherty MMIC from 859 to 960 MHz

General Parameters

  • Transistor Type
    LDMOS
  • Application Industry
    Cellular, Wireless Infrastructure
  • Application
    LTE, GSM, WCDMA, Small Cell, Base Station
  • CW/Pulse
    CW, Pulse
  • Frequency
    859 to 960 MHz
  • Power
    28 to 37 dBm (P3dB)
  • Power(W)
    0.63 to 5 W (P3dB)
  • Power Gain (Gp)
    16.8 to 21 dB
  • Input Return Loss
    12 to 19 dB
  • Supply Voltage
    28 V
  • Current
    15 mA
  • Drain Efficiency
    34 to 38.4 %
  • Drain Leakage Current (Id)
    1.4 uA
  • Gate Leakage Current (Ig)
    140 nA
  • Junction Temperature (Tj)
    175 Degree C
  • Package Type
    Surface Mount
  • Dimension
    7.0 x 7.0 x 0.98 mm
  • RoHS
    Yes
  • Storage Temperature
    -55 to 125 Degree C

Technical Documents

Need Help Finding a Product?

Need Help?

Let us know what you need, we can help find products that meet your requirement.