CLF1G0035S-200P Image

CLF1G0035S-200P

RF Transistor by Ampleon

Note : Your request will be directed to Ampleon.

The CLF1G0035S-200P from Ampleon is a RF Transistor with Frequency DC to 3.5 GHz, P1dB 53.01 dBm, Duty_Cycle 0.1, Power Gain (Gp) 9 to 11 dB, VSWR 10.00:1. Tags: Surface Mount. More details for CLF1G0035S-200P can be seen below.

Product Specifications

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Product Details

  • Part Number
    CLF1G0035S-200P
  • Manufacturer
    Ampleon
  • Description
    DC to 3.5 GHz, Broadband RF power GaN HEMT

General Parameters

  • Transistor Type
    HEMT
  • Technology
    GaN on SiC
  • Application Industry
    ISM, Wireless Infrastructure, Radar, Aerospace & Defence, Test & Measurement, RF Energy
  • Application
    Industrial, WiMax, Cellular, Mobile, Radio, Jammers, EMC Testing
  • CW/Pulse
    Pulse, CW
  • Frequency
    DC to 3.5 GHz
  • P1dB
    53.01 dBm
  • Pulsed Width
    100 us
  • Duty_Cycle
    0.1
  • Power Gain (Gp)
    9 to 11 dB
  • VSWR
    10.00:1
  • Class
    AB
  • Supply Voltage
    50 V
  • Threshold Voltage
    -2.4 to -1.3 V
  • Breakdown Voltage - Drain-Source
    150 V
  • Voltage - Gate-Source (Vgs)
    -8 to 3 V
  • Drain Current
    660 mA
  • Package Type
    Surface Mount
  • Package
    SOT1228B
  • RoHS
    Yes
  • Storage Temperature
    -65 to 150 Degree C

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