NPT2018 Image

NPT2018

RF Transistor by MACOM (189 more products)

Note : Your Quotation Request will be directed to MACOM.

The NPT2018 from MACOM is a RF Transistor with Frequency DC to 3.5 GHz, Power 40.97 dBm, Power(W) 12.5 W, Saturated Power 41.2 dBm, Gain 17.5 dB. More details for NPT2018 can be seen below.

Product Specifications

  • Part Number
    NPT2018
  • Manufacturer
    MACOM
  • Description
    48 V GaN HEMT Transistor that operates from DC to 4.0 GHz with 12 W Saturated Power
  • Transistor Type
    HEMT
  • Technology
    GaN on Si
  • Application Industry
    ISM, Wireless Infrastructure, Aerospace & Defence, Radar
  • Application
    Mobile Radio, Defense, Communication, Avionics, HF/VHF/UHF, ISM Band, L Band, S Band
  • CW/Pulse
    Pulse, CW
  • Frequency
    DC to 3.5 GHz
  • Power
    40.97 dBm
  • Power(W)
    12.5 W
  • Saturated Power
    41.2 dBm
  • Gain
    17.5 dB
  • Small Signal Gain
    18 dB
  • Power Gain (Gp)
    16 dB
  • Supply Voltage
    48 V
  • Threshold Voltage
    -2.5 to -0.5 V
  • Drain Efficiency
    0.53
  • Package Type
    Surface Mount
  • Package
    6x3mm PDFN-14LD
  • RoHS
    Yes
Click to view more product details on manufacturer's website  »
Need Help?

Need Help?

x
Let us know what you need, we can help find products that meet your requirement.