RF Transistor by Ampleon (293 more products)

Note : Your request will be directed to Ampleon.

ART35FE Image

The ART35FE from Ampleon is an LDMOS Power Transistor that operates from 1 to 650 MHz. It provides a P1dB of 35 W with a gain of 31 dB and a drain efficiency of 70.5%. The transistor has been designed to have a wide supply voltage range from 30 V to 65 V. It is available in a rugged flanged ceramic package that measures 20.45 x 18.54 x 4.67 mm.

This transistor uses Ampleon’s Advanced Rugged Technology (ART) and is designed for ISM applications, plasma generators, MRI systems, CO2 lasers, particle accelerators, FM radio, VHF TV, non-cellular communications, and UHF radar applications. It has integrated dual sided ESD protection enables class C operation and complete switch off of the transistor.

Product Specifications

View similar products

Product Details

  • Part Number
  • Manufacturer
  • Description
    35 W LDMOS Power Transistor from 1 to 650 MHz

General Parameters

  • Transistor Type
  • Technology
  • Application Industry
    Broadcast, Radar, ISM
  • Application
    MRI Systems, Plasma Generators, FM, VHF, Communication
  • CW/Pulse
    CW, Pulse
  • Frequency
    1 to 650 MHz
  • Power(W)
    35 W
  • Power Gain (Gp)
    29 to 31 dB
  • Input Return Loss
    -24 dB
  • Class
    Class AB
  • Supply Voltage
    65 V
  • Voltage - Drain-Source (Vdss)
    65 V
  • Current
    20 mA
  • Drain Efficiency
    67 to 70.5 %
  • Drain Leakage Current (Id)
    1.2 uA
  • Input Capacitance
    48.39 pF
  • Junction Temperature (Tj)
    225 Degree C
  • RoHS
  • Grade
    Commercial, Commerical
  • Storage Temperature
    -65 to 150 Degree C

Technical Documents