B10G3438N55D

RF Transistor by Ampleon (292 more products)

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The B10G3438N55D from Ampleon is a 3-Stage LDMOS Asymmetrical Doherty MMIC that operates from 3400 to 3800 MHz. The carrier and peaking device, input splitter, output combiner, and pre-match are integrated into a single package. It delivers an output power of 47.5 dBm (at 3 dB compression point) with a power gain of 33.7 dB and has a drain efficiency of 37.3%. The transistor has been developed using Ampleon’s state-of-the-art GEN10 LDMOS technology. It is designed for wideband operation and provides independent control of the carrier and peaking bias.

The B10G3438N55D is available in an internally matched PQFN package with integrated ESD protection and requires a DC supply of 28 V. It has a 50-ohm source impedance and 30-ohm output impedance thanks to integrated pre-match. The transistor is suitable for use as a final stage in small cells (GSM, W-CDMA, and LTE) and massive MIMO applications.

Product Specifications

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Product Details

  • Part Number
    B10G3438N55D
  • Manufacturer
    Ampleon
  • Description
    LDMOS Doherty MMIC from 3.4 to 3.8 GHz

General Parameters

  • Transistor Type
    LDMOS
  • Application Industry
    Base Station
  • Application
    Base Stations, GSM, LTE, WCDMA
  • CW/Pulse
    CW, Pulse
  • Frequency
    3400 to 3800 MHz
  • Power
    39 dBm
  • Power(W)
    7.9433 W
  • Gain
    31.1 to 36.1 dB
  • Power Gain (Gp)
    7.94 W
  • Efficiency
    30 to 37.3 %
  • Input Return Loss
    -10 dB
  • Supply Voltage
    28 V
  • Drain Gate Voltage
    28 V
  • Drain Leakage Current (Id)
    1.4 uA
  • Gate Leakage Current (Ig)
    140 nA
  • Impedance Zl
    30 Ohms
  • Impedance Zs
    50 Ohms
  • Junction Temperature (Tj)
    200 Degree C
  • Package Type
    Flange
  • RoHS
    Yes
  • Storage Temperature
    -65 to 150 Degree C

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