RF Transistor by Ampleon (303 more products)

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B11G2327N70D Image

The B11G2327N70D from Ampleon is a Dual-Path 2-Stage Doherty LDMOS FET that operates from 2300 MHz to 2700 MHz. It delivers an output power of 5 W with a power gain of 30 dB and has a drain efficiency of 20.7%. This transistor uses Ampleon's state-of-the-art LDMOS technology, has an integrated input splitter and output combiner. The carrier and peaking device, input splitter, output combiner, and pre-match are integrated into a single package. It is available in a PQFN package and is ideal for use in macro-cell base station driver, microcell base station, 5G MIMO, W-CDMA/LTE, active antenna, and general-purpose applications.

Product Specifications

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Product Details

  • Part Number
  • Manufacturer
  • Description
    Dual-Path 2-Stage Doherty LDMOS FET from 2.3 to 2.7 GHz

General Parameters

  • Transistor Type
  • Application Industry
    Cellular, Wireless Infrastructure
  • Application
    5G Massive MIMO, WCDMA, LTE, Base Stations, Active Antenna, General Purpose
  • Frequency
    2.3 to 2.7 GHz
  • Power
    48 to 49.5 dBm (P3dB)
  • Power(W)
    63 to 89.12 W (P3dB)
  • Power Gain (Gp)
    27.5 to 33.5 dB
  • Input Return Loss
    10 to 15 V
  • Supply Voltage
    28 V
  • Voltage - Drain-Source (Vdss)
    65 V
  • Current
    290 mA
  • Drain Efficiency
    16 to 54 %
  • Drain Leakage Current (Id)
    1.4 uA
  • Gate Leakage Current (Ig)
    140 nA
  • Junction Temperature (Tj)
    200 Degree C
  • Package Type
    Surface Mount
  • Package
  • RoHS
  • Grade
  • Storage Temperature
    -65 to 150 Degree C

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