BLC10G19XS-600AVT Image

BLC10G19XS-600AVT

RF Transistor by Ampleon (256 more products)

Note : Your request will be directed to Ampleon.

The BLC10G19XS-600AVT from Ampleon is an LDMOS Doherty power transistor that operates from 1930 to 1995 MHz. It delivers peak power exceeding 600W with a Doherty gain of 15.5 dB and a drain efficiency above 48%. Integration of internal video decoupling minimizes memory effects, providing excellent digital pre-distortion capability.

This transistor is suited for operation up to 30 V and is available in a 6-lead air cavity plastic package. The transistor is ideal for single-band multi-carrier macro base stations applications.

Product Specifications

    Product Details

    • Part Number :
      BLC10G19XS-600AVT
    • Manufacturer :
      Ampleon
    • Description :
      1930 to 1995 MHz LDMOS Transistor for Base Station Applications

    General Parameters

    • Transistor Type :
      LDMOS
    • Technology :
      GaN on SiC
    • Application Industry :
      Wireless Infrastructure
    • CW/Pulse :
      CW, Pulse
    • Frequency :
      1930 to 1695 MHz
    • Power :
      57.78 dBm
    • Power(W) :
      600 W
    • Power Gain (Gp) :
      14 to 15 dB
    • Input Return Loss :
      10 to 15 dB
    • Supply Voltage :
      30 V
    • Voltage - Drain-Source (Vdss) :
      30 V
    • Voltage - Gate-Source (Vgs) :
      1.6 to 2.4 V
    • Drain Efficiency :
      45 to 49 %
    • Drain Leakage Current (Id) :
      2.8 uA
    • Gate Leakage Current (Ig) :
      280 nA
    • Package Type :
      4-Hole Flange
    • RoHS :
      Yes
    • Operating Temperature :
      -40 to 125 Degree C
    • Storage Temperature :
      -65 to 150 Degree C

    Technical Documents

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