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BLF10M6LS135

RF Transistor by Ampleon (238 more products)

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The BLF10M6LS135 from Ampleon is a RF Transistor with Frequency 700 MHz to 1 GHz, Power 51.3 dBm, Power(W) 134.9 W, Power Gain (Gp) 20 to 21 dB, Input Return Loss -10 to -6.5 dB. More details for BLF10M6LS135 can be seen below.

Product Specifications

  • Part Number
    BLF10M6LS135
  • Manufacturer
    Ampleon
  • Description
    51.3 dBm (135 W), LDMOS Transistor from 700 to 1000 MHz
  • Transistor Type
    LDMOS
  • Technology
    Si
  • Application Industry
    Broadcast, ISM, RF Energy
  • Application
    Industrial, WCDMA
  • CW/Pulse
    CW
  • Frequency
    700 MHz to 1 GHz
  • Power
    51.3 dBm
  • Power(W)
    134.9 W
  • Power Gain (Gp)
    20 to 21 dB
  • Input Return Loss
    -10 to -6.5 dB
  • VSWR
    10.00:1
  • Class
    AB
  • Supply Voltage
    28 V
  • Threshold Voltage
    1.4 to 2.4 V
  • Breakdown Voltage - Drain-Source
    65 V
  • Voltage - Gate-Source (Vgs)
    -0.5 to 13 V
  • Drain Current
    950 mA
  • Package Type
    Surface Mount
  • Package
    SOT502B
  • RoHS
    Yes
  • Storage Temperature
    -65 to 150 Degree C
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