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The BLF13H9L750P from Ampleon is an LDMOS RF power transistor that operates from DC to 1300 MHz. It delivers 750 Watt (CW) of power while operating from a 50 V power source. The transistor has integrated dual sided ESD protection, excellent thermal stability and provides power efficiency of more than 62%. It is designed using a push pull configuration and is ideal for accelerator applications at a frequency of 1.3 GHz. The transistor is available in a SOT539 package.
AlGaAs/InGaAs pHEMT Transistor Die from DC to 18 GHz
15 W GaN HEMT from DC to 6 GHz
Dual-Path 2-Stage Doherty LDMOS FET from 2.3 to 2.7 GHz
400 W CW/Pulsed GaN Amplifier from 2.75 to 3.75 GHz
5 W Surface-Mount LDMOS FET from 900 to 2700 MHz
6 W GaN Transistor Die from 10 MHz to 18 GHz
500 W GaN HEMT from 2.9 to 3.5 GHz for S-Band Radar Systems
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