BLF8G27LS-100V Image

BLF8G27LS-100V

RF Transistor by Ampleon (238 more products)

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The BLF8G27LS-100V from Ampleon is a RF Transistor with Frequency 2.5 to 2.7 GHz, P1dB 50 dBm, Power Gain (Gp) 15.8 to 17 dB, Input Return Loss -10 dB, VSWR 10.00:1. Tags: Surface Mount. More details for BLF8G27LS-100V can be seen below.

Product Specifications

    Product Details

    • Part Number :
      BLF8G27LS-100V
    • Manufacturer :
      Ampleon
    • Description :
      50 dBm (100 W), LDMOS Transistor from 2500 to 2700 MHz

    General Parameters

    • Transistor Type :
      LDMOS
    • Technology :
      Si
    • Application Industry :
      Wireless Infrastructure
    • Application :
      Base Station, WCDMA
    • CW/Pulse :
      Pulse, CW
    • Frequency :
      2.5 to 2.7 GHz
    • P1dB :
      50 dBm
    • Power Gain (Gp) :
      15.8 to 17 dB
    • Input Return Loss :
      -10 dB
    • VSWR :
      10.00:1
    • Class :
      AB
    • Supply Voltage :
      28 V
    • Threshold Voltage :
      1.5 to 2.3 V
    • Breakdown Voltage - Drain-Source :
      65 V
    • Voltage - Gate-Source (Vgs) :
      -0.5 to 13 V
    • Drain Current :
      900 mA
    • Drain Bias Current :
      29 A
    • Package Type :
      Surface Mount
    • Package :
      SOT1244B
    • RoHS :
      Yes
    • Storage Temperature :
      -65 to 150 Degree C

    Technical Documents

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