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BLP10H660P

RF Transistor by Ampleon (269 more products)

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The BLP10H660P from Ampleon is an RF Power LDMOS Transistor that operates from HF (10 MHz) to 1000 MHz. This LDMOS Transistor provides 60 watts of power with 18 dB of gain and is ideal for broadcast and industrial applications. It has integrated dual sided ESD protection that enables class C operation and complete switch off of the transistor. This highly efficient and rugged transistor is available in a SOT1223-2 package.

Product Specifications

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Product Details

  • Part Number
    BLP10H660P
  • Manufacturer
    Ampleon
  • Description
    60 Watt LDMOS Transistor from 10 to 1000 MHz

General Parameters

  • Transistor Type
    LDMOS
  • Technology
    Si
  • Application Industry
    ISM, RF Energy
  • Application
    Broadcast, ISM
  • CW/Pulse
    CW
  • Frequency
    10 MHz to 1 GHz
  • Power(W)
    60 W
  • P1dB
    47.78 dBm
  • Power Gain (Gp)
    16.8 to 18 dB
  • VSWR
    40.0:1
  • Class
    AB
  • Supply Voltage
    50 V
  • Threshold Voltage
    1.25 to 2.25 V
  • Breakdown Voltage - Drain-Source
    110 V
  • Voltage - Gate-Source (Vgs)
    -6 to 11 V
  • Drain Efficiency
    70 to 72 %
  • Drain Current
    40 mA
  • Feedback Capacitance
    0.15 pF
  • Input Capacitance
    28.7 pF
  • Output Capacitance
    9.1pF
  • Package Type
    Surface Mount
  • Package
    SOT1223-2
  • RoHS
    Yes
  • Storage Temperature
    -65 to 150 Degree C

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