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IGT5259L50

RF Transistor by Integra Technologies, Inc. (201 more products)

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The IGT5259L50 from Integra Technologies is a fully-matched, GaN-on-SiC HEMT that provides 50 W of peak pulsed output power while operating from 5 to 6 GHz. This transistor provides 14 dB of gain, and 43% efficiency at 1 millisecond/15% pulse conditions. It is available in a RoHS-compatible metal/ceramic flange-mount package with gold metallization that measures 20.32 x 10.16 mm and is ideal for pulsed C-Band Radar applications. This device is 100% high-power RF tested in a 50 Ohms RF test fixture and meets all specifications of MIL-STD-750D.

Product Specifications

    Product Details

    • Part Number :
      IGT5259L50
    • Manufacturer :
      Integra Technologies, Inc.
    • Description :
      GaN on SiC 50W Transistor for C-Band Pulsed Radar Systems

    General Parameters

    • Transistor Type :
      HEMT
    • Technology :
      GaN on SiC
    • Application Industry :
      Radar
    • CW/Pulse :
      Pulse
    • Frequency :
      5.2 to 5.9 GHz
    • Power :
      47 dBm
    • Power(W) :
      50 W
    • Pulsed Width :
      1 ms
    • Duty_Cycle :
      15 %
    • Power Gain (Gp) :
      13 to 15 dB
    • Input Return Loss :
      -18 to -7 dB
    • Supply Voltage :
      50 V
    • Threshold Voltage :
      -2.3 V
    • Drain Efficiency :
      38 to 60 %
    • Drain Leakage Current (Id) :
      1 mA
    • Impedance Zs :
      50 Ohms
    • Package Type :
      Flanged
    • Dimension :
      0.80 x 0.40 Inches
    • RoHS :
      Yes
    • Operating Temperature :
      -55 to 150 Degree C
    • Storage Temperature :
      -55 to 150 Degree C

    Technical Documents

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