NPT2024 Image


RF Transistor by MACOM (187 more products)

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The NPT2024 is a wideband transistor that operates from DC to 2.7 GHz. It is the first transistor that has been developed on MACOM's 4th generation GaN on Silicon (GaN on Si) process. This process provides performance that rivals expensive GaN on Silicon Carbide (GaN on SiC) at a projected volume production cost structure below that of incumbent LDMOS technology. The NPT2024 supports CW, pulsed, and linear operation with output power levels up to 200 W (53 dBm). Featuring 50 V operation, this device offers CW operation of 16 dB gain at 1.5 GHz, and 60% drain efficiency. This GaN on Si HEMT D-Mode transistor is ideally suited for defense communications, land mobile radio, avionics, wireless infrastructure, ISM applications and VHF/UHF/L/S-band radar.

Product Specifications

  • Part Number
  • Manufacturer
  • Description
    DC to 2.7 GHz GaN on Si Wideband Transistor
  • Transistor Type
  • Application
    ISM Band
  • Application Type
    Military, Wireless Infrastructure, Radio
  • Frequency
    DC to 2.7 GHz
  • Gain
    16 dB
  • Power
    53 dBm (200 Watts)
  • Supply Voltage
    50 V
  • Drain Efficiency
  • Package
    Surface Mount
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