The MHT1006N from NXP Semiconductors is a RF Transistor with Frequency 728 MHz to 2.7 GHz, Power 31 to 31 dBm, Power(W) 1.26 W, P1dB 40 dBm, Duty_Cycle 0.1. More details for MHT1006N can be seen below.

Product Specifications

  • Part Number
    MHT1006N
  • Manufacturer
    NXP Semiconductors
  • Description
    RF Power LDMOS Transistor for Consumer and Commercial Cooking, 728-2700 MHz, 10 W CW, 28 V
  • Transistor Type
    LDMOS
  • Technology
    Si
  • Application Industry
    ISM, RF Energy
  • Application
    ISM Band, Commercial
  • CW/Pulse
    Pulse, CW
  • Frequency
    728 MHz to 2.7 GHz
  • Power
    31 to 31 dBm
  • Power(W)
    1.26 W
  • CW Power
    10 W
  • P1dB
    40 dBm
  • Pulsed Width
    100 us
  • Duty_Cycle
    0.1
  • Power Gain (Gp)
    20 to 21.7 dB
  • VSWR
    5.00:1
  • Polarity
    N-Channel
  • Supply Voltage
    28 V
  • Threshold Voltage
    0.8 to 1.6 Vdc
  • Voltage - Gate-Source (Vgs)
    -6 to 10 Vdc
  • Drain Efficiency
    0.551
  • Drain Current
    90 mA
  • Impedance Zs
    50 Ohms
  • Thermal Resistance
    3.7 °C/W
  • Package Type
    Surface Mount
  • Package
    PLD--1.5W PLASTIC
  • RoHS
    Yes
  • Operating Temperature
    -40 to 150 Degree C
  • Storage Temperature
    -65 to 150 Degree C
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