The MHT1006N from NXP Semiconductors is a RF Transistor with Frequency 728 to 2700 MHz, Gain 19.8 dB @ 2400, Power Gain (Gp) 19.8 dB @ 2400, Power 40 dBm, P1dB 40 dBm, 10 W. More details for MHT1006N can be seen below.
1805 to 1880 MHz, 89 W Airfast RF Power LDMOS Transistor
4500 to 5900 MHz GaN HEMT for C-Band Radar Systems
GaN HEMT Transistor 1.2 to 1.4 GHz
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