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MHT1006N

RF Transistor by NXP Semiconductors (248 more products)

The MHT1006N from NXP is a RF Power LDMOS Transistor that operates from 728 to 2700 MHz. This transistor has been developed for use in consumer and commercial cooking applications. It provides up to 10 watts of CW power with a gain of over 20 dB and has a PAE of 55.1%. This device requires a 28 V supply and is internally matched to 50 ohms. The Transistor is designed for Digital Predistortion Error Correction Systems and has Internal RF Feedback.

Product Specifications

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Product Details

  • Part Number
    MHT1006N
  • Manufacturer
    NXP Semiconductors
  • Description
    728 to 2700 MHz RF Transistor for Consumer and Commercial Cooking

General Parameters

  • Transistor Type
    LDMOS
  • Technology
    Si
  • Application Industry
    ISM, RF Energy
  • Application
    ISM Band, Commercial
  • CW/Pulse
    Pulse, CW
  • Frequency
    728 MHz to 2.7 GHz
  • Power
    31 to 31 dBm
  • Power(W)
    1.26 W
  • CW Power
    10 W
  • P1dB
    40 dBm
  • Pulsed Width
    100 us
  • Duty_Cycle
    0.1
  • Power Gain (Gp)
    20 to 21.7 dB
  • VSWR
    5.00:1
  • Polarity
    N-Channel
  • Supply Voltage
    28 V
  • Threshold Voltage
    0.8 to 1.6 Vdc
  • Voltage - Gate-Source (Vgs)
    -6 to 10 Vdc
  • Drain Efficiency
    0.551
  • Drain Current
    90 mA
  • Impedance Zs
    50 Ohms
  • Thermal Resistance
    3.7 °C/W
  • Package Type
    Surface Mount
  • Package
    PLD--1.5W PLASTIC
  • RoHS
    Yes
  • Operating Temperature
    -40 to 150 Degree C
  • Storage Temperature
    -65 to 150 Degree C

Technical Documents

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